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647101

Sigma-Aldrich

Silicon

wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

Szinonimák:

Silicon element

Bejelentkezésa Szervezeti és Szerződéses árazás megtekintéséhez
Összes fotó(1)

About This Item

Lineáris képlet:
Si
CAS-szám:
7440-21-3
Molekulatömeg:
28.09
EC-szám:
231-130-8
MDL-szám:
MFCD00085311
UNSPSC kód:
12352300
PubChem Substance ID:
24883508
NACRES:
NA.23

form

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Minőségi szint

100

nem tartalmaz

dopant

átmérő × vastagság

2 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

sűrűség

2.33 g/mL at 25 °C (lit.)

félvezető tulajdonságok

<111>, N-type

SMILES string

[Si]

InChI

1S/Si

Nemzetközi kémiai azonosító kulcs

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Alkalmazás


  • Silicon Photonics and Electronics: Discusses the integration of silicon photonics with electronics, relevant for developing high-performance computational devices, pertinent to material science and high-performance computing research (C Xiang et al., 2021).

  • Silicon Silicon pi Single Bond: Details the structural chemistry of silicon and its implications in molecular and material sciences, useful for chemists interested in silicon′s applications in nanotechnology and materials science (S Kyushin et al., 2020).

Fizikai tulajdonságok

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm.
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

Tárolási osztály kódja

13 - Non Combustible Solids

WGK

nwg

Lobbanási pont (F)

Not applicable

Lobbanási pont (C)

Not applicable

Egyéni védőeszköz

Eyeshields, Gloves, type N95 (US)

Válasszon a legfrissebb verziók közül:

Analitikai tanúsítványok (COA)

Lot/Batch Number
MKCV6328
MKCQ9223
MKCR9666
MKCN9097
MKCP9285

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Dokumentumtár megtekintése

Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
View All Related Papers

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Protocols

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Tudóscsoportunk valamennyi kutatási területen rendelkezik tapasztalattal, beleértve az élettudományt, az anyagtudományt, a kémiai szintézist, a kromatográfiát, az analitikát és még sok más területet.

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