On the origin of contact resistances of organic thin film transistors.

On the origin of contact resistances of organic thin film transistors.

Advanced materials (Deerfield Beach, Fla.) (2012-06-26)

Marko Marinkovic, Dagmawi Belaineh, Veit Wagner, Dietmar Knipp

ABSTRAKT

A model is presented that describes the gate-voltage-dependent contact resistance and channel-length-dependent charge carrier mobility of small-molecule-based organic thin-film transistors in top and bottom drain/source contact configuration.

MATERIAŁY

Numer produktu

Marka

Opis produktu

324620

Sigma-Aldrich

Lithium bis(trimethylsilyl)amide, 97%

524514

Sigma-Aldrich

Tris[N,N-bis(trimethylsilyl)amide]yttrium

702722

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Potassium bis(trimethylsilyl)amide solution, 1 M in THF

577014

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Lithium bis(trimethylsilyl)amide solution, 1 M in tert-butyl methyl ether

80631

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Sodium bis(trimethylsilyl)amide solution, 40% in THF

52619

Supelco

Hexamethyldisilazane, for GC derivatization, LiChropur^™, ≥99.0% (GC)

86944

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Hexamethyldisilazane, produced by Wacker Chemie AG, Burghausen, Germany, ≥97.0% (GC)

324671

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440191

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Hexamethyldisilazane, reagent grade, ≥99%

224367

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Lithium bis(trimethylsilyl)amide solution, 1.0 M in hexanes

277304

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Potassium bis(trimethylsilyl)amide solution, 0.5 M in toluene

368059

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235083

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Sodium bis(trimethylsilyl)amide, 95%

245585

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Sodium bis(trimethylsilyl)amide solution, 1.0 M in THF

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775061

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766917

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577928

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379212

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775053

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