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647799
Silicon
wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
Bardziej ekologiczna alternatywa
Synonim(y):
Silicon element
Wybierz wielkość
| Rozmiar/SKU | Dostępność | Cena netto |
|---|---|---|
1 ea | Skontaktuj się z Obsługą Klienta, aby uzyskać informacje na temat dostępności | 505,00 zł |
Informacje o tej pozycji
505,00 zł
Quality Segment
form
crystalline (cubic (a = 5.4037)), wafer (single side polished)
contains
phosphorus as dopant
greener alternative product characteristics
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sustainability
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diam. × thickness
2 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
greener alternative category
semiconductor properties
<111>, N-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
1 of 1
Ta pozycja | |||
|---|---|---|---|
| description wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm | description disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100% | description rod, 50mm, diameter 5.0mm, crystalline, 100% | description rod, 25 mm diameter, length 150 mm, purity 99.999% |
| form crystalline (cubic (a = 5.4037)), wafer (single side polished) | form foil | form rod | form rod |
| mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) |
| Quality Level 100 | Quality Level - | Quality Level - | Quality Level - |
| density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) |
| bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) |
| semiconductor properties <111>, N-type | semiconductor properties - | semiconductor properties - | semiconductor properties - |
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Klasa składowania
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