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646687

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

Synonim(y):

Silicon element

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About This Item

Wzór liniowy:
Si
Numer CAS:
7440-21-3
Masa cząsteczkowa:
28.09
Numer WE:
231-130-8
Numer MDL:
MFCD00085311
Kod UNSPSC:
12352300
Identyfikator substancji w PubChem:
24883476
NACRES:
NA.23

Postać

crystalline (cubic (a = 5.4037))
wafer (single side polished)

nie zawiera

dopant

śr. × grubość

2 in. × 0.5 mm

tw

2355 °C (lit.)

mp

1410 °C (lit.)

gęstość

2.33 g/mL at 25 °C (lit.)

właściwości półprzewodników

<100>, N-type

ciąg SMILES

[Si]

InChI

1S/Si

Klucz InChI

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Opis ogólny

Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

Zastosowanie

  • Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.: This article addresses the challenges and real-world applications of high-performance silicon anodes in lithium-ion batteries, presenting innovative solutions to enhance their efficiency (Khan et al., 2024).
  • Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.: This research focuses on strain engineering to improve the fabrication of freestanding perovskite oxides, which are crucial for various high-purity silicon applications in academia (Yun et al., 2024).

Właściwości fizyczne

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″
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Kod klasy składowania

13 - Non Combustible Solids

Klasa zagrożenia wodnego (WGK)

WGK 3

Temperatura zapłonu (°F)

Not applicable

Temperatura zapłonu (°C)

Not applicable

Środki ochrony indywidualnej

Eyeshields, Gloves, type N95 (US)

Certyfikaty analizy (CoA)

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Molecular monolayers on silicon surfaces.
Lopinski GP and Wayner DDM.
Material Matters, 3(2), 38-38 (2008)
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
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Protokoły

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

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