Silicon

Name: Silicon
Brand: ALDRICH
Price: 688 PLN

wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

Synonim(y):

Silicon element

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1 EA

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Wzór liniowy:

Numer CAS:

7440-21-3

Masa cząsteczkowa:

28.09

NACRES:

NA.23

PubChem Substance ID:

24883420

UNSPSC Code:

12352300

MDL number:

MFCD00085311

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InChI

1S/Si

SMILES string

[Si]

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

form

crystalline (cubic (a = 5.4037)), wafer

contains

boron as dopant

greener alternative product characteristics

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diam. × thickness

2 in. × 0.3 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

Enabling

semiconductor properties

<111>, P-type

Quality Level

100

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Ta pozycja	647772	647764	647675
Sigma-Aldrich 647705 Silicon	Sigma-Aldrich 647772 Silicon	Sigma-Aldrich 647764 Silicon	Sigma-Aldrich 647675 Silicon
form crystalline (cubic (a = 5.4037)), wafer	form crystalline (cubic (a = 5.4037)), wafer (single side polished)	form crystalline (cubic (a = 5.4037)), wafer (single side polished)	form crystalline (cubic (a = 5.4037)), wafer (single side polished)
Quality Level 100	Quality Level 100	Quality Level 100	Quality Level 100
bp 2355 °C (lit.)	bp 2355 °C (lit.)	bp 2355 °C (lit.)	bp 2355 °C (lit.)
density 2.33 g/mL at 25 °C (lit.)	density 2.33 g/mL at 25 °C (lit.)	density 2.33 g/mL at 25 °C (lit.)	density 2.33 g/mL at 25 °C (lit.)
mp 1410 °C (lit.)	mp 1410 °C (lit.)	mp 1410 °C (lit.)	mp 1410 °C (lit.)
contains boron as dopant	contains boron as dopant	contains boron as dopant	contains boron as dopant

General description

0 vortex defects. Etch pitch density (EPD) < 100 (cm^-2). Resistivity 10^-3- 40Ωcm

Oxygen content: <= 1~1.8 x 10¹⁸/cm³; Carbon content: <= 5 x 10¹⁶/cm³; Boule diameter: 1~8 ″

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Klasa składowania

13 - Non Combustible Solids

wgk

WGK 2

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

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Odwiedź Bibliotekę dokumentów

Preparation of mesoporous Si-C-O fibers with a narrow mesopore size distribution.

Chengyong Li et al.

Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)

Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.

Simple fabrication of antireflective silicon subwavelength structure with self-cleaning properties.

Bo-Soon Kim et al.

Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)

A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal

Porous silicon platform for optical detection of functionalized magnetic particles biosensing.

Pil Ju Ko et al.

Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)

The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon

Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.

Seungil Park et al.

Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)

We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.

Study of the microstructures and lifetime of spin-cast silicon sheets for photovoltaics.

Hyunhui Kim et al.

Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)

Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image

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