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Merck

651486

Sigma-Aldrich

Galliumarsenid

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

Synonym(e):

Gallium monoarsenide

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About This Item

Lineare Formel:
GaAs
CAS-Nummer:
Molekulargewicht:
144.64
EG-Nummer:
MDL-Nummer:
UNSPSC-Code:
12352300
PubChem Substanz-ID:
NACRES:
NA.23

Form

(single crystal substrate)

Widerstandsfähigkeit

≥1E7 Ω-cm

Durchm. × Dicke

2 in. × 0.5 mm

Dichte

5.31 g/mL at 25 °C (lit.)

Halbleitereigenschaften

<100>

SMILES String

[Ga]#[As]

InChI

1S/As.Ga

InChIKey

JBRZTFJDHDCESZ-UHFFFAOYSA-N

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Physikalische Eigenschaften

Mobility >=4500 cm2 · V-1 · S-1
Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB

Physikalische Form

cubic (a = 5.6533 Å)

Piktogramme

Health hazard

Signalwort

Danger

Gefahreneinstufungen

Carc. 1B - Repr. 1B - STOT RE 1

Zielorgane

Respiratory system,hematopoietic system

Lagerklassenschlüssel

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

WGK

WGK 3

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable


Analysenzertifikate (COA)

Suchen Sie nach Analysenzertifikate (COA), indem Sie die Lot-/Chargennummer des Produkts eingeben. Lot- und Chargennummern sind auf dem Produktetikett hinter den Wörtern ‘Lot’ oder ‘Batch’ (Lot oder Charge) zu finden.

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Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
M Baranowski et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(6), 065801-065801 (2013-01-12)
In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not
I I Yakimenko et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 072201-072201 (2013-01-19)
We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the
Kazuue Fujita et al.
Optics express, 20(18), 20647-20658 (2012-10-06)
Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no

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