593044
Aluminum nitride
nanopowder, <100 nm particle size
Sinônimo(s):
Aluminium nitride
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10 G
R$ 546,00
50 G
R$ 1.687,00
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10 G
R$ 546,00
50 G
R$ 1.687,00
About This Item
Fórmula linear:
AlN
Número CAS:
Peso molecular:
40.99
Número CE:
Número MDL:
Código UNSPSC:
12352302
ID de substância PubChem:
NACRES:
NA.23
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Formulário
nanopowder
Nível de qualidade
tamanho de partícula
<100 nm
pf
>2200 °C (lit.)
densidade
3.26 g/mL at 25 °C (lit.)
cadeia de caracteres SMILES
N#[Al]
InChI
1S/Al.N
chave InChI
PIGFYZPCRLYGLF-UHFFFAOYSA-N
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Descrição geral
Aluminum nitride (AlN) is a wide bandgap semiconductor with exceptional thermal conductivity, high electrical insulation, and piezoelectric properties. It is widely used in electronics, such as in high-power and high-frequency devices, as well as in optoelectronics for UV light emitters. Additionally, AlN is utilized in biomedical devices due to its biocompatibility.
Aplicação
- This review explores the significant properties of aluminum nitride in the context of semiconductor materials, discussing its large bandgap and wide transparency range, which are advantageous for ultraviolet to mid-infrared applications (Li et al., 2021).
Palavra indicadora
Danger
Frases de perigo
Declarações de precaução
Classificações de perigo
Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation
Órgãos-alvo
Lungs
Código de classe de armazenamento
4.3 - Hazardous materials which set free flammable gases upon contact with water
Classe de risco de água (WGK)
WGK 3
Ponto de fulgor (°F)
Not applicable
Ponto de fulgor (°C)
Not applicable
Equipamento de proteção individual
dust mask type N95 (US), Eyeshields, Gloves
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Shuangxi Nie et al.
Nanomaterials (Basel, Switzerland), 9(8) (2019-08-07)
Nanocomposites consisting of cellulose nanofibrils (CNFs) and nano-aluminum nitride (AlN) were prepared using a simple vacuum-assisted filtration process. Bleached sugarcane bagasse pulp was treated with potassium hydroxide and sodium chlorite, and was subsequently ultra-finely ground and homogenized to obtain CNFs.
Morphologically selective synthesis of nanocrystalline aluminum nitride.
Haber JA, et al.
Chemistry of Materials, 10(12), 4062-4071 (1998)
Nanocrystalline aluminum nitride: II, sintering and properties.
Panchula ML and Ying JY
American Chemical Science Journal, 86(7), 1121-1127 (2003)
Electrical and thermophysical properties of epoxy/aluminum nitride nanocomposites: Effects of nanoparticle surface modification
Peng W, et al.
Composites Part A: Applied Science and Manufacturing, 41(9), 1201-1209 (2010)
Ruyen Ro et al.
IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 57(1), 46-51 (2009-12-31)
In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al
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