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GRFETS10

Sigma-Aldrich

Graphene FET chip

S10

Synonim(y):

Graphene FET, Graphene FET sensor, Graphene FET with 30 Hall-bar devices and 6 2-probe configurations with varied channel geometry

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About This Item

Kod UNSPSC:
43211915
NACRES:
NA.23

opis

Dirac point:< 50 V
Gate Oxide material: SiO2
Gate Oxide thickness: 90 nm
Graphene field-effect mobility: >1000 cm2/V·s
Maximum gate-source voltage: ± 50 V
Maximum temperature rating: 150 °C
Maximum drain-source current density: 107 A/cm2
Metallization: Chromium 2 nm/Gold 50 nm
Monolayer CVD grown Graphene based field effect transistors (FET) S10
Residual charge carrier density: <2 x 1012 cm-2
Resistivity of substrate: 1-10 Ω·cm
Yield >75%

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Opis ogólny

Device configuration:

This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.
The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.
Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm2. The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.

Zastosowanie

  • Graphene device research
  • FET based sensor research for active materials deposited on graphene
  • Chemical sensors
  • Biosensors
  • Bioelectronics
  • Magnetic sensors
  • Photodetectors
GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.

Cechy i korzyści

Device Features:

  • State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene
  • Devices are not encapsulated and can be functionalized by additives
  • Perfect platform for sensor research and development
  • 36 individual graphene FETs per chip
  • Mobilities typically > 1000 cm2/V·s

Przestroga

Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors.
To maintain the quality of the devices, we recommend taking the following precautions:
  • Be careful when handling the graphene FET chip.
  • Tweezers should not contact the device area directly.
This page may contain text that has been machine translated.

Kod klasy składowania

11 - Combustible Solids

Klasa zagrożenia wodnego (WGK)

nwg

Temperatura zapłonu (°F)

Not applicable

Temperatura zapłonu (°C)

Not applicable

Certyfikaty analizy (CoA)

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Review-Field-Effect Transistor Biosensing: Devices and Clinical Applications
Syu Y C, et al.
ECS journal of solid state science and technology : JSS, 7(7), Q3196-Q3207 (2018)
Wafer-scale statistical analysis of graphene field-effect transistors-part II: analysis of device properties
Smith A D, et al.
IEEE Transactions on Electron Devices, 64(9), 3927-3933 (2017)
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Lanthanide complexes as molecular dopants for realizing air-stable n-type graphene logic inverters with symmetric transconductance
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