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Merck

747092

Sigma-Aldrich

C8-BTBT

≥99% (HPLC)

Synonim(y):

2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiophene

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About This Item

Wzór empiryczny (zapis Hilla):
C30H40S2
Numer CAS:
Masa cząsteczkowa:
464.77
Kod UNSPSC:
12352103
Identyfikator substancji w PubChem:
NACRES:
NA.23

Próba

≥99% (HPLC)

Postać

powder

mp

108-112 °C

właściwości półprzewodników

P-type (mobility=5.5 cm2/V·s)

ciąg SMILES

CCCCCCCCC1=CC2=C(C=C1)C3=C(C(C=CC(CCCCCCCC)=C4)=C4S3)S2

InChI

1S/C30H40S2/c1-3-5-7-9-11-13-15-23-17-19-25-27(21-23)31-30-26-20-18-24(22-28(26)32-29(25)30)16-14-12-10-8-6-4-2/h17-22H,3-16H2,1-2H3

Klucz InChI

YWIGIVGUASXDPK-UHFFFAOYSA-N

Opis ogólny

C8-BTBT is a conducting polymer with [1]benzothieno[3,2-b][1]- benzothiophene (BTBT) as the base material for the development of air-stable semiconductors. It can form a spin coated thin film that can be used as a p-type semiconductor with charge mobility of 43 cm2V-1s-1. It exhibits highly ordered self-assembled monolayer (SAM) on graphene and hexagonal boron nitride (hBN) with sheet resistance: <1,000 ohm/sq

Zastosowanie

C8-BTBT is a conjugating polymer that can be used in a variety of organic electronics based applications which includes organic photovoltaic cells (OPV), organic light emitting diodes (OLEDs) and organic thin film transistors (OTFTs).
High field-effect mobility of 5.5-5.7 cm2/Vs and high On/Off ratio of 109 ; solution-processed (solubility of 80 mg/mL) OFETs

Informacje prawne

Product of Nippon Kayaku

Kod klasy składowania

11 - Combustible Solids

Klasa zagrożenia wodnego (WGK)

WGK 3

Temperatura zapłonu (°F)

Not applicable

Temperatura zapłonu (°C)

Not applicable


Certyfikaty analizy (CoA)

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Dokumenty związane z niedawno zakupionymi produktami zostały zamieszczone w Bibliotece dokumentów.

Odwiedź Bibliotekę dokumentów

Zhimin Chai et al.
ACS applied materials & interfaces, 10(21), 18123-18130 (2018-05-09)
Assembly of organic semiconductors with ordered crystal structure has been actively pursued for electronics applications such as organic field-effect transistors (OFETs). Among various film deposition methods, solution-based film growth from small molecule semiconductors is preferable because of its low material
Solution-processable organic single crystals with bandlike transport in field-effect transistors.
Liu C, et al.
Advanced Materials, 23(4), 523-526 (2011)
Darmawan; Peter;
Advances in Functional Materials, 22(21), 4577-4583 (2012)
Zhimin Chai et al.
Nanotechnology, 30(48), 485203-485203 (2019-08-31)
Achieving low-cost fabrication of organic field-effect transistors (OFETs) has long been pursued in the semiconductor industry. Solution-based process allows the fabrication of OFETs cost-effective because of its merit of vacuum-free and room temperature operation. Here, we show a facile and
Jeong-Wan Jo et al.
Materials (Basel, Switzerland), 13(23) (2020-12-11)
The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al2O3)

Produkty

Small molecular weight organic semiconductors are promising for flexible transistor applications in next-gen soft electronics.

Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.

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