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651486

Sigma-Aldrich

Gallium arsenide

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

Sinonimo/i:

Gallium monoarsenide

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About This Item

Formula condensata:
GaAs
Numero CAS:
1303-00-0
Peso molecolare:
144.64
Numero CE:
215-114-8
Numero MDL:
MFCD00011017
Codice UNSPSC:
12352300
ID PubChem:
24883832
NACRES:
NA.23

Forma fisica

(single crystal substrate)

Resistività

≥1E7 Ω-cm

diam. × spessore

2 in. × 0.5 mm

Densità

5.31 g/mL at 25 °C (lit.)

Caratteristiche del semiconduttore

<100>

Stringa SMILE

[Ga]#[As]

InChI

1S/As.Ga
JBRZTFJDHDCESZ-UHFFFAOYSA-N

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Categorie correlate

Proprietà fisiche

Mobility >=4500 cm2 · V-1 · S-1
Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB

Stato fisico

cubic (a = 5.6533 Å)

Pittogrammi

Health hazard
GHS08

Avvertenze

Danger

Indicazioni di pericolo

H350,H360F,H372

Classi di pericolo

Carc. 1B - Repr. 1B - STOT RE 1

Organi bersaglio

Respiratory system,hematopoietic system

Codice della classe di stoccaggio

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Certificati d'analisi (COA)

Cerca il Certificati d'analisi (COA) digitando il numero di lotto/batch corrispondente. I numeri di lotto o di batch sono stampati sull'etichetta dei prodotti dopo la parola ‘Lotto’ o ‘Batch’.

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Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
Yu Bomze et al.
Physical review letters, 109(2), 026801-026801 (2012-10-04)
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and
Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
M Baranowski et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(6), 065801-065801 (2013-01-12)
In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not
I I Yakimenko et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 072201-072201 (2013-01-19)
We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the
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