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651486

Sigma-Aldrich

Gallium arsenide

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

Synonyme(s) :

Gallium monoarsenide

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About This Item

Formule linéaire :
GaAs
Numéro CAS:
1303-00-0
Poids moléculaire :
144.64
Numéro CE :
215-114-8
Numéro MDL:
MFCD00011017
Code UNSPSC :
12352300
ID de substance PubChem :
24883832
Nomenclature NACRES :
NA.23

Niveau de qualité

100

Forme

(single crystal substrate)

Résistivité

≥1E7 Ω-cm

Diam. × épaisseur

2 in. × 0.5 mm

Densité

5.31 g/mL at 25 °C (lit.)

Propriétés du semi-conducteur

<100>

Chaîne SMILES 

[Ga]#[As]

InChI

1S/As.Ga

Clé InChI

JBRZTFJDHDCESZ-UHFFFAOYSA-N

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Catégories apparentées

Propriétés physiques

Mobility >=4500 cm2 · V-1 · S-1
Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB

Forme physique

cubic (a = 5.6533 Å)

Pictogrammes

Health hazard
GHS08

Mention d'avertissement

Danger

Mentions de danger

H350,H360F,H372

Classification des risques

Carc. 1B - Repr. 1B - STOT RE 1

Organes cibles

Respiratory system,hematopoietic system

Code de la classe de stockage

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

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Certificats d'analyse (COA)

Lot/Batch Number
MKCW5704
MKCQ3703
MKCP1414
MKCH7479
MKCC3292

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Yu Bomze et al.
Physical review letters, 109(2), 026801-026801 (2012-10-04)
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and
Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Chan Il Yeo et al.
Optics express, 20(17), 19554-19562 (2012-10-06)
We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs
Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
Eli Fahrenkrug et al.
Journal of the American Chemical Society, 135(1), 330-339 (2012-12-26)
Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ≥ 80 °C). Ga(l) pool electrodes yielded consistent electrochemical behavior, affording repetitive measurements
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