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646687

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

Synonyme(s) :

Silicon element

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About This Item

Formule linéaire :
Si
Numéro CAS:
7440-21-3
Poids moléculaire :
28.09
Numéro CE :
231-130-8
Numéro MDL:
MFCD00085311
Code UNSPSC :
12352300
ID de substance PubChem :
24883476
Nomenclature NACRES :
NA.23

Forme

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Niveau de qualité

100

Ne contient pas

dopant

Diam. × épaisseur

2 in. × 0.5 mm

Point d'ébullition

2355 °C (lit.)

Pf

1410 °C (lit.)

Densité

2.33 g/mL at 25 °C (lit.)

Propriétés du semi-conducteur

<100>, N-type

Chaîne SMILES 

[Si]

InChI

1S/Si

Clé InChI

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Catégories apparentées

Description générale

Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

Application

  • Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.: This article addresses the challenges and real-world applications of high-performance silicon anodes in lithium-ion batteries, presenting innovative solutions to enhance their efficiency (Khan et al., 2024).
  • Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.: This research focuses on strain engineering to improve the fabrication of freestanding perovskite oxides, which are crucial for various high-purity silicon applications in academia (Yun et al., 2024).

Propriétés physiques

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

Code de la classe de stockage

13 - Non Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Équipement de protection individuelle

Eyeshields, Gloves, type N95 (US)

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Certificats d'analyse (COA)

Lot/Batch Number
MKCW6935
MKCT4980
MKCT4978
MKCT4975
MKCT4983

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Molecular monolayers on silicon surfaces.
Lopinski GP and Wayner DDM.
Material Matters, 3(2), 38-38 (2008)
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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Molecular Monolayers on Silicon Surfaces

Explore methods for molecular monolayers on silicon surfaces, their properties, and applications in molecular electronics and sensing.

Molecular Monolayers on Silicon Surfaces

Explore methods for molecular monolayers on silicon surfaces, their properties, and applications in molecular electronics and sensing.

Molecular Monolayers on Silicon Surfaces

Explore methods for molecular monolayers on silicon surfaces, their properties, and applications in molecular electronics and sensing.

Molecular Monolayers on Silicon Surfaces

Explore methods for molecular monolayers on silicon surfaces, their properties, and applications in molecular electronics and sensing.

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Protocoles

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

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