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263265

Sigma-Aldrich

Gallium

99.99% trace metals basis

Synonyme(s) :

Elemental gallium

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About This Item

Formule linéaire :
Ga
Numéro CAS:
7440-55-3
Poids moléculaire :
69.72
Numéro MDL:
MFCD00134045
Code UNSPSC :
12141715
ID de substance PubChem :
24855960
Nomenclature NACRES :
NA.23

Niveau de qualité

200

Pureté

99.99% trace metals basis

Forme

(metallic liquid or solid (ambient temp dependent))

Résistivité

25.795 μΩ-cm, 30°C

Point d'ébullition

2403 °C (lit.)

Pf

29.8 °C (lit.)

Densité

5.904 g/mL at 25 °C (lit.)

Température de stockage

2-8°C

Chaîne SMILES 

[Ga]

InChI

1S/Ga

Clé InChI

GYHNNYVSQQEPJS-UHFFFAOYSA-N

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Catégories apparentées

Description générale

Gallium is a rareearth element that is widely used in smart electronic devices and integratedcircuits as it provides the advantages of low energy consumption and highcomputational speeds. Due to its high boiling point and low melting point, itexhibits a wide temperature range in the liquid state. It tends to formsulfate, chloride, and phosphate complexes due to its high charge. Thecompounds of gallium find applications in advanced semiconductors and LEDchips.

Application

Gallium can be used as a precursor to synthesize:
  • Gallium nitride and other Ga-based compounds for optoelectronic applications.
  • Sulfur/gallium hybrid cathode material for lithium-sulfur batteries. The surface of Ga metal promotes the redox reaction of lithium polysulfides due to its electrocatalytic effect.
  • Ga-based liquid alloys for the fabrication offlexible electronic devices.

Caractéristiques et avantages

  • Excellent conductor of heat and electricity
  • Wide temperature range in the liquid state
  • Lowvapor pressure at high temperature

Pictogrammes

CorrosionExclamation mark
GHS05,GHS07

Mention d'avertissement

Warning

Mentions de danger

H290,H302,H412

Classification des risques

Acute Tox. 4 Oral - Aquatic Chronic 3 - Met. Corr. 1

Code de la classe de stockage

8A - Combustible corrosive hazardous materials

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Équipement de protection individuelle

Eyeshields, Faceshields, Gloves, type P3 (EN 143) respirator cartridges

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Certificats d'analyse (COA)

Lot/Batch Number
MKCV8503
MKCT2084
MKCT9349
MKCR9025
MKCS4430

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Gallium(III) oxide ≥99.99% trace metals basis

Sigma-Aldrich

215066

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Gallium nitride 99.9% trace metals basis

Sigma-Aldrich

481769

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Indium pieces, 99.99% trace metals basis

Sigma-Aldrich

326615

Indium

Elizabeth M Carnicom et al.
Dalton transactions (Cambridge, England : 2003), 46(41), 14158-14163 (2017-10-07)
Previously unreported σ-phases in the ternary niobium-based systems Nb-X-Ga for X = Ru, Rh, Pd, Ir, Pt, Au, and Nb-X-Al for X = Ir, and Pt are presented, prepared by arc-melting followed by annealing at 1000 °C for 1 week.
Sayan Sarkar et al.
Scientific reports, 9(1), 8180-8180 (2019-06-05)
Recent advances in high performance thermoelectric materials have garnered unprecedented attention owing to their capability of direct transformation of heat energy to useful electricity. Copper Telluride (Cu2Te), a member of the chalcogenide family has emerged as a state-of-the-art thermoelectric material
C Tessarek et al.
Optics express, 21(3), 2733-2740 (2013-03-14)
Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically
Michael A Jakupec et al.
Metal ions in biological systems, 42, 425-462 (2004-06-23)
Gallium has been the second metal to show activity against malignant tumors in humans soon after the establishment of platinum drugs in routine clinical practice. It has the unique property of inhibiting tumor growth as a simple cation, mainly because
Prasana Sahoo et al.
Biosensors & bioelectronics, 44, 164-170 (2013-02-22)
We demonstrate a very simple and generic protocol for ultrasensitive in-situ label-free detection of DNA hybridization using third generation poly(amidoamine)dendrimer (G3-PAMAM) functionalized GaN nanowires (NWs). PAMAM modified GaN NWs provides large density of docking site to immobilize significant number of
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