The empty bottle is tested to withstand at least 36 psi, but it is not tested once the bottle contains the product. It is not typical to pressure-transfer from one of these HDPE bottles. The product should be transferred into a secondary container from which it is suitable for pressure transfer.
901621
Buffered oxide etchant (BOE) 10:1
Synonym(e):
BHF, Buffered HF
Anmeldenzur Ansicht organisationsspezifischer und vertraglich vereinbarter Preise
Größe auswählen
1 L
CHF 130.00
Alle Fotos(1)
Größe auswählen
Ansicht ändern
1 L
CHF 130.00
About This Item
UNSPSC-Code:
12161700
NACRES:
NA.23
Empfohlene Produkte
Form
liquid
Verwandte Kategorien
Allgemeine Beschreibung
Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.
Anwendung
Buffered oxide etchant (BOE) 10:1 can be used in the etching of titanium carbide, which can be used in microelectromechanical systems (MEMS).[1] It can also be used in the etching of spin-on-dopant (SOD) for the development of conductor-insulator-conductor tunneling diodes.[2] It can also be used to enhance the surface of fused quartz devices.[3]
Signalwort
Danger
H-Sätze
Gefahreneinstufungen
Acute Tox. 2 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Eye Dam. 1 - Skin Corr. 1B
Lagerklassenschlüssel
6.1B - Non-combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
WGK
WGK 2
Flammpunkt (°F)
Not applicable
Flammpunkt (°C)
Not applicable
Hier finden Sie alle aktuellen Versionen:
Besitzen Sie dieses Produkt bereits?
In der Dokumentenbibliothek finden Sie die Dokumentation zu den Produkten, die Sie kürzlich erworben haben.
Kunden haben sich ebenfalls angesehen
Study on surface roughness improvement of Fused Quartz after thermal and chemical post-processing
2016 IEEE International Symposium on Inertial Sensors and Systems, 31(8), 101-104 (2016)
New process development for planar-type CIC tunneling diodes
Choi K, et al.
IEEE Electron Device Letters, 31(8), 809-811 (2010)
Integration of wear-resistant titanium carbide coatings into MEMS fabrication processes
Radhakrishnan G, et al.
Tribology Letters, 8(2-3), 133-137 (2000)
-
I’m considering using nitrogen pressure to dispense Buffered Oxide Etch from your containers. The pressure I plan to use is approximately 2 ATM (1 ATM above atmospheric pressure). Can you confirm if the bottles are rated to safely handle this pressure?
1 answer-
Helpful?
-
Active Filters
Unser Team von Wissenschaftlern verfügt über Erfahrung in allen Forschungsbereichen einschließlich Life Science, Materialwissenschaften, chemischer Synthese, Chromatographie, Analytik und vielen mehr..
Setzen Sie sich mit dem technischen Dienst in Verbindung.
