EA stands for each. This product is supplied as 1 each and 5 each.
647101
Silicon
wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Synonyme(s) :
Silicon element
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About This Item
Formule linéaire :
Si
Numéro CAS:
Poids moléculaire :
28.09
Numéro CE :
Numéro MDL:
Code UNSPSC :
12352300
ID de substance PubChem :
Nomenclature NACRES :
NA.23
Le tarif et la disponibilité ne sont pas disponibles actuellement.
Produits recommandés
Forme
crystalline (cubic (a = 5.4037))
wafer (single side polished)
Niveau de qualité
Ne contient pas
dopant
Diam. × épaisseur
2 in. × 0.5 mm
pb
2355 °C (lit.)
Pf
1410 °C (lit.)
Densité
2.33 g/mL at 25 °C (lit.)
Propriétés du semi-conducteur
<111>, N-type
Chaîne SMILES
[Si]
InChI
1S/Si
Clé InChI
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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Catégories apparentées
Application
- Silicon Photonics and Electronics: Discusses the integration of silicon photonics with electronics, relevant for developing high-performance computational devices, pertinent to material science and high-performance computing research (C Xiang et al., 2021).
- Silicon Silicon pi Single Bond: Details the structural chemistry of silicon and its implications in molecular and material sciences, useful for chemists interested in silicon′s applications in nanotechnology and materials science (S Kyushin et al., 2020).
Propriétés physiques
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm.
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″
Code de la classe de stockage
13 - Non Combustible Solids
Classe de danger pour l'eau (WGK)
nwg
Point d'éclair (°F)
Not applicable
Point d'éclair (°C)
Not applicable
Équipement de protection individuelle
Eyeshields, Gloves, type N95 (US)
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Les clients ont également consulté
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Min Joon Huang et al.
Journal of nanoscience and nanotechnology, 13(6), 3810-3817 (2013-07-19)
In this work, we demonstrated a silicon nanowire (SiNW) biosensing platform capable of simultaneously identifying different Dengue serotypes on a single sensing chip. Four peptide nucleic acids (PNAs), specific to each Dengue serotypes (DENV-1 to DENV-4), were spotted on different
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Articles
Explore methods for molecular monolayers on silicon surfaces, their properties, and applications in molecular electronics and sensing.
Explore methods for molecular monolayers on silicon surfaces, their properties, and applications in molecular electronics and sensing.
Explore methods for molecular monolayers on silicon surfaces, their properties, and applications in molecular electronics and sensing.
Explore methods for molecular monolayers on silicon surfaces, their properties, and applications in molecular electronics and sensing.
Protocoles
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
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