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647802

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm

Synonyme(s) :

Silicon element

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About This Item

Formule linéaire :
Si
Numéro CAS:
7440-21-3
Poids moléculaire :
28.09
Numéro MDL:
MFCD00085311
Code UNSPSC :
12352300
ID de substance PubChem :
24883552
Nomenclature NACRES :
NA.23

Forme

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Contient

phosphorus as dopant

Diam. × épaisseur

3 in. × 0.5 mm

Point d'ébullition

2355 °C (lit.)

Pf

1240 °C
1410 °C (lit.)

Densité

2.33 g/mL at 25 °C (lit.)

Propriétés du semi-conducteur

<100>, N-type

Chaîne SMILES 

[Si]

InChI

1S/Si

Clé InChI

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Catégories apparentées

Propriétés physiques

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-1 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Code de la classe de stockage

13 - Non Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 2

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Équipement de protection individuelle

Eyeshields, Gloves, type N95 (US)

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Sigma-Aldrich

643262

Gold coated silicon wafer

Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
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