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647543

Sigma-Aldrich

Silicon

wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

Synonyme(s) :

Silicon element

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About This Item

Formule linéaire :
Si
Numéro CAS:
7440-21-3
Poids moléculaire :
28.09
Numéro CE :
231-130-8
Numéro MDL:
MFCD00085311
Code UNSPSC :
12352300
ID de substance PubChem :
24883544
Nomenclature NACRES :
NA.23

Forme

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Ne contient pas

dopant

Diam. × épaisseur

3 in. × 0.5 mm

Point d'ébullition

2355 °C (lit.)

Pf

1410 °C (lit.)

Densité

2.33 g/mL at 25 °C (lit.)

Propriétés du semi-conducteur

<111>, N-type

Chaîne SMILES 

[Si]

InChI

1S/Si

Clé InChI

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Propriétés physiques

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity >1,000 Ω•cm
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

Code de la classe de stockage

13 - Non Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Équipement de protection individuelle

Eyeshields, Gloves, type N95 (US)

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Silicon dioxide single crystal substrate, optical grade, 99.99% trace metals basis, L × W × thickness 10&#160;mm × 10&#160;mm × 0.5&#160;mm

Sigma-Aldrich

634867

Silicon dioxide

Oxyde d’aluminium single crystal substrate, &#60;0001&#62;

Sigma-Aldrich

634875

Oxyde d′aluminium

Gold coated silicon wafer 99.999% (Au), layer thickness 1000&#160;Å, 99.99% (Ti)

Sigma-Aldrich

643262

Gold coated silicon wafer

Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
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