725471

双(甲基-η5_-环戊二烯)甲氧基甲基锆

packaged for use in deposition systems

• 同義詞: ZRCMMM, ZrD-CO₄
• 線性公式: Zr(CH₃C₅H₄)₂CH₃OCH₃
• 分子量：: 295.53
• MDL號碼: MFCD16875687
• 分類程式碼代碼: 12352103
• PubChem物質ID: 329764163
• NACRES: NA.23

屬性

• 形狀: liquid
• 反應適用性: core: zirconium
• 顏色: colorless
• bp: 110 °C/0.5 mmHg (lit.)
• 密度: 1.27 g/mL±0.01 g/mL at 25 °C (lit.)
• SMILES 字串: C[C]1[C][C][C][C]1.C[C]2[C][C][C][C]2.C[Zr]OC
• InChI: 1S/2C6H7.CH3O.CH3.Zr/c2*1-6-4-2-3-5-6;1-2;;/h2*2-5H,1H3;1H3;1H3;/q;;-1;;+1
• InChI 密鑰: LFGIFPGCOXPKMG-UHFFFAOYSA-N

描述

一般說明

Atomic number of base material: 40 Zirconium

應用

Precursors Packaged for Depositions Systems

Advanced precursor for atomic layer deposition of ZrO₂ thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications.[1] Excellent properties of HfO₂ and ZrO₂ films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.[2]

特點和優勢

Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.

包裝

Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.

安全資訊

• 象形圖: GHS07
• 訊號詞: Warning
• 危險聲明: H302,H315,H319
• 防範說明: P305 + P351 + P338
• 危險分類: Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Irrit. 2
• 儲存類別代碼: 10 - Combustible liquids not in Storage Class 3
• 水污染物質分類（WGK）: WGK 3
• 閃點（°F）: 226.4 °F
• 閃點（°C）: 108 °C