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  • Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition.

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition.

Dalton transactions (Cambridge, England : 2003) (2017-11-22)
Richard O'Donoghue, Julian Rechmann, Morteza Aghaee, Detlef Rogalla, Hans-Werner Becker, Mariadriana Creatore, Andreas Dirk Wieck, Anjana Devi
KIVONAT

Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga

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Termékleírás

Sigma-Aldrich
Lithium dimethylamide, 95%