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Merck
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文件

767603

Sigma-Aldrich

2,7 -二苯基[ 1 ] 苯并噻吩[3,2-b][1]苯并噻吩

sublimed grade, 99%

别名:

2,7-二苯基苯并[b]苯并[4,5]噻吩并[2,3-d]噻吩, DPh-BTBT

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About This Item

经验公式（希尔记法）:
C26H16S2
分子量:
392.54
分類程式碼代碼:
12352103
PubChem物質ID:
329767323
NACRES:
NA.23

等級

sublimed grade

化驗

99%

形狀

powder or crystals

mp

363-368 °C

半導體屬性

P-type (mobility=2 cm2/V·s)

SMILES 字串

c1ccc(cc1)-c2ccc3c(c2)sc4c5ccc(cc5sc34)-c6ccccc6

InChI

1S/C26H16S2/c1-3-7-17(8-4-1)19-11-13-21-23(15-19)27-26-22-14-12-20(16-24(22)28-25(21)26)18-9-5-2-6-10-18/h1-16H

InChI 密鑰

SBJIDUSVEICMRY-UHFFFAOYSA-N

應用

2,7 -二苯基[ 1 ] 苯并噻吩（3,2-b）[1]苯并噻吩是一种具有高电荷迁移率的有机半导体材料。它可用于制造有机薄膜晶体管（OFET）、光伏电池和有机电致发光二极管（OLED）。
有机场效应晶体管 (OFET) 材料；p 型有机半导体；p 型小分子；升华级材料

法律資訊

Nippon Kayaku 产品

象形圖

Exclamation mark
GHS07

訊號詞

Warning

危險聲明

H302,H319

危險分類

Acute Tox. 4 Oral - Eye Irrit. 2

儲存類別代碼

11 - Combustible Solids

水污染物質分類（WGK）

WGK 3

閃點（°F）

247.1 °F

閃點（°C）

119.5 °C

分析证书(COA)

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Alkylated Dinaphtho (2, 3-b: 2′ , 3′ -f) Thieno (3, 2-b) Thiophenes (Cn-DNTTs): Organic Semiconductors for High-Performance Thin-Film Transistors.
Kang MJ, et al.
Advanced Materials, 23(10), 1222-1225 (2011)
Takimiya, Kazuo; et al.
Science and Technology of Advanced Materials, 8, 273-276 (2007)
Kazuo Takimiya et al.
Journal of the American Chemical Society, 128(39), 12604-12605 (2006-09-28)
Vapor-deposited thin films of a newly developed sulfur-containing heteroarene, 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT), were used as an active layer of OFETs, which showed excellent FET characteristics in ambient conditions with mobilities of approximately 2.0 cm2 V-1 s-1 and Ion/Ioff of 107.
2, 7-Diphenyl (1) benzothieno (3, 2-b) benzothiophene, a new organic semiconductor for air-stable organic field-effect transistors with mobilities up to 2.0 cm2 V-1 s-1.
Takimiya K, et al.
Journal of the American Chemical Society, 128(39), 12604-12605 (2006)
Facile synthesis of highly pi-extended heteroarenes, dinaphtho [2, 3-b: 2 `, 3 `-f] chalcogenopheno [3, 2-b] chalcogenophenes, and their application to field-effect transistors
Yamamoto T and Takimiya K
Journal of the American Chemical Society, 129(8), 2224-2225 (2007)

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