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质量水平
表单
(single crystal substrate)
电阻率
≥1E7 Ω-cm
直径× 厚度
2 in. × 0.5 mm
密度
5.31 g/mL at 25 °C (lit.)
半导体性质
<100>
SMILES字符串
[Ga]#[As]
InChI
1S/As.Ga
InChI key
JBRZTFJDHDCESZ-UHFFFAOYSA-N
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物理属性
未掺杂的（Si 型半导体），蚀坑密度 <5×104cm-2，生长技术为液封直拉法和水平布里奇曼法
迁移率 ≥4500cm2 · V-1 · S-1
外形
cubic (a = 5.6533 Å)
警示用语：
Danger
危险声明
危险分类
Carc. 1B - Repr. 1B - STOT RE 1
靶器官
Respiratory system,hematopoietic system
储存分类代码
6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
I I Yakimenko et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 072201-072201 (2013-01-19)
We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the
Kazuue Fujita et al.
Optics express, 20(18), 20647-20658 (2012-10-06)
Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no
Anand Kumar Tatikonda et al.
Biosensors & bioelectronics, 45, 201-205 (2013-03-19)
Microelectronic-based sensors are ideal for real-time continuous monitoring of health states due to their low cost of production, small size, portability, and ease of integration into electronic systems. However, typically semiconductor-based devices cannot be operated in aqueous solutions, especially in
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