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品質等級
化驗
99.9% trace metals basis
形狀
powder
mp
800 °C (lit.)
SMILES 字串
N#[Ga]
InChI
1S/Ga.N
InChI 密鑰
JMASRVWKEDWRBT-UHFFFAOYSA-N
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應用
氮化镓(GaN)是一种宽带隙半导体材料,可用于各种电子器件的开发,如发光二极管(LED)和场效应晶体管(FET)。它还可用作基于自旋电子学应用的过渡金属掺杂剂。
訊號詞
Warning
危險聲明
危險分類
Skin Sens. 1
儲存類別代碼
11 - Combustible Solids
水污染物質分類(WGK)
WGK 3
閃點(°F)
Not applicable
閃點(°C)
Not applicable
個人防護裝備
Eyeshields, Faceshields, Gloves, type N95 (US)
历史批次信息供参考:
分析证书(COA)
Lot/Batch Number
其他客户在看
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Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 26(1), 3-17 (2020-01-21)
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High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
Kim H, et al.
Nano Letters, 4(6), 1059-1062 (2004)
Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
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