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化驗
≥99.99% trace metals basis
形狀
(crystalline powder)
反應適用性
reagent type: catalyst
core: gallium
密度
5.88 g/mL at 25 °C
SMILES 字串
O=[Ga]O[Ga]=O
InChI
1S/2Ga.3O
InChI 密鑰
QZQVBEXLDFYHSR-UHFFFAOYSA-N
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一般說明
氧化镓(III)(Ga2O3)是一种宽带隙半导体,属于透明半导体氧化物(TSO)家族。它可以形成不同的多晶型,如α-、β-、γ-、δ- 和 ε-。多晶和纳米晶 Ga2O3 可以使用多种方法制备,如化学气相沉积、热蒸发和升华、分子束外延、熔体生长等。它被广泛用作各种应用的功能材料,包括光电子、化学传感器、催化、半导体器件、场效应晶体管等。
應用
Ga2O3 被广泛用作制造电致发光器件的主体材料。例如,可以使用掺杂铕的 Ga2O3 薄膜作为发光层来制造光学透明的电致发光器件。
由于其独特的光学和电学特性,如中等电导率和高激光损伤阈值,Ga2O3 可用于激光驱动的电子加速器、低损耗等离子体和硅基电介质激光加速器。
它也可以用作丙烷脱氢制丙烯的有效催化剂。
由于其独特的光学和电学特性,如中等电导率和高激光损伤阈值,Ga2O3 可用于激光驱动的电子加速器、低损耗等离子体和硅基电介质激光加速器。
它也可以用作丙烷脱氢制丙烯的有效催化剂。
用于制备 Sr2CuGaO3S 的起始材料,这是一种罕见的方形金字塔镓的例子。
儲存類別代碼
11 - Combustible Solids
水污染物質分類(WGK)
WGK 2
閃點(°F)
Not applicable
閃點(°C)
Not applicable
個人防護裝備
Eyeshields, Gloves, type N95 (US)
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