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594911

Sigma-Aldrich

Silicon carbide

nanopowder, <100 nm particle size

Synonyma:

Carbon silicide, Carborundum, Methanidylidynesilanylium, Silicon monocarbide

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About This Item

Lineární vzorec:
SiC
Číslo CAS:
Molekulová hmotnost:
40.10
EC Number:
MDL number:
UNSPSC Code:
12352302
PubChem Substance ID:
NACRES:
NA.23

form

nanopowder

Quality Level

surface area

70-90 m2/g

particle size

<100 nm

mp

2700 °C (lit.)

density

3.22 g/mL at 25 °C (lit.)

bulk density

0.069 g/cm3

SMILES string

[C-]#[Si+]

InChI

1S/CSi/c1-2

InChI key

HBMJWWWQQXIZIP-UHFFFAOYSA-N

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General description

Silicon carbide (SiC), also known as carborundum, is composed of silicon and carbon, forming a hard refractory ceramic material that exhibits extreme mechanical and thermal stability. This product is a SiC nanopowder with a particle size less than 100 nm and a high surface area of 70-90 m2/g. Our product is primarily made of the beta phase with approximately 3-15% adopting an amorphous structure. With a Mohs scale hardness of 9.5, silicon carbide is one of the hardest materials, which make its nanopowder useful in the production of abrasives for polishing and grinding and as a coating or composite material for high wear-resistance. SiC nanoparticles are also under research as sensors and imaging nanoprobes for bioscience and clinical diagnosis.

Application

  • Overview of silicon carbide power devices: This document provides a comprehensive review of the characteristics and applications of silicon carbide (SiC) in power devices, discussing its advantages over traditional silicon devices in handling high voltages and efficiencies (Choi, 2016).

Physical form

primarily beta phase (3-15% amorphous)

Storage Class

11 - Combustible Solids

wgk_germany

nwg

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves


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Osvědčení o analýze (COA)

Lot/Batch Number

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Sigma-Aldrich

633097

Silicon

Width-tunable graphene nanoribbons on a SiC substrate with a controlled step height.
Qingsong Huang et al.
Advanced materials (Deerfield Beach, Fla.), 25(8), 1144-1148 (2012-12-13)
Mengning Ding et al.
ACS applied materials & interfaces, 5(6), 1928-1936 (2013-02-23)
A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures-nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na2SiO3) solution. The resulting
Roberto Verucchi et al.
Journal of the American Chemical Society, 134(42), 17400-17403 (2012-10-13)
Silicon carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting SiC-based technologies is the high-temperature synthesis. In this work, we provide unprecedented experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using
Jianguang Wang et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085302-085302 (2013-02-01)
First-principles calculations have been carried out to investigate the adsorption of Pd(n) (n ≤ 10) clusters on the single-walled (8, 0) and (5, 5) SiC nanotubes (SiCNTs). We find that the Pd(n) clusters can be stably adsorbed on the outer surfaces of
First-in-man, last in evidence?
Salvatore Brugaletta et al.
EuroIntervention : journal of EuroPCR in collaboration with the Working Group on Interventional Cardiology of the European Society of Cardiology, 8(9), 999-1001 (2013-01-24)

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