901268
Pure Strip
stabilized sulfuric acid-hydrogen peroxide compound
Anmeldenzur Ansicht organisationsspezifischer und vertraglich vereinbarter Preise
Alle Fotos(1)
About This Item
UNSPSC-Code:
12352200
NACRES:
NA.23
Empfohlene Produkte
Form
liquid
Allgemeine Beschreibung
Pure Strip is suitable for stripping both positive and negative photoresists in addition to other organic compounds in a variety of semiconductor, photomask, and IC photolithography compounds. High yields can be achieved due to the high purity/low particulate composition of Pure Strip.
Advantages Pure Strip include negligible attack on exposed metal surfaces, including aluminum, vs. other acidic formulations, residue-free rinsing, and extended bath life (minimum of five days at room temperature). Pure Strip is ready to use and requires no mixing.
Advantages Pure Strip include negligible attack on exposed metal surfaces, including aluminum, vs. other acidic formulations, residue-free rinsing, and extended bath life (minimum of five days at room temperature). Pure Strip is ready to use and requires no mixing.
Anwendung
Pure Strip may be used at room temperature or at elevated temperature. Higher temperatures will increase the activity but decrease the bath life (1 day at 60-80 °C). Substrates are stripped of photoresist and cleaned effectively with minimal attack on aluminum (approximately 35 Angstroms/minute at room temperature) and negligible attack on other metals and alloys such as titanium, Ti-tungsten, copper, tantalum silicide, and ITO.
Signalwort
Danger
H-Sätze
Gefahreneinstufungen
Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1A
Lagerklassenschlüssel
8B - Non-combustible corrosive hazardous materials
WGK
WGK 3
Flammpunkt (°F)
Not applicable
Flammpunkt (°C)
Not applicable
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