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Sigma-Aldrich

Silizium

pieces, 99.95% trace metals basis

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About This Item

Lineare Formel:
Si
CAS-Nummer:
7440-21-3
Molekulargewicht:
28.09
EG-Nummer:
231-130-8
MDL-Nummer:
MFCD00085311
UNSPSC-Code:
12141911
PubChem Substanz-ID:
24861139
NACRES:
NA.23

Assay

99.95% trace metals basis

Form

pieces

bp

2355 °C (lit.)

mp (Schmelzpunkt)

1410 °C (lit.)

Dichte

2.33 g/mL at 25 °C (lit.)

SMILES String

[Si]

InChI

1S/Si

InChIKey

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Verwandte Kategorien

Lagerklassenschlüssel

13 - Non Combustible Solids

WGK

WGK 3

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Persönliche Schutzausrüstung

Eyeshields, Gloves, type N95 (US)

Analysenzertifikate (COA)

Suchen Sie nach Analysenzertifikate (COA), indem Sie die Lot-/Chargennummer des Produkts eingeben. Lot- und Chargennummern sind auf dem Produktetikett hinter den Wörtern ‘Lot’ oder ‘Batch’ (Lot oder Charge) zu finden.

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Silizium powder, max. particle size 45 micron, weight 200 g, purity 99.5%

GF38819571

Silizium

Silizium lump, 25 mm max. lump size, weight 50 g, purity 99.999%

GF15703477

Silizium

Silizium wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

Sigma-Aldrich

646687

Silizium

Silikon rod, 100mm, diameter 2.0mm, crystalline, 100%

GF64686998

Silikon

Silizium powder, 45 max. part. size (micron), weight 50 g, purity 99.5%

GF79775577

Silizium

Silizium powder, 45 max. part. size (micron), weight 100 g, high purity 99.998%

GF64953614

Silizium

Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
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