Pular para o conteúdo
Merck

Electrical transport model of Silicene as a channel of field effect transistor.

Journal of nanoscience and nanotechnology (2014-04-18)
Hatef Sadeghi
RESUMO

The analytical electrical transport model of the Silicene, a single layer of sp3 bonded silicon atoms in the honeycomb lattice structure as a channel in the field effect transistor configuration is presented in this paper. Although the carrier concentration of the Silicene shows similar behavior to Graphene, there are some differences in the conductance behavior. Presented model shows increment in the total carrier and the conductance with the gate voltage as expected for conventional semiconductors which affected by the temperature only in the neutrality point. The minimum conductance is increased by the temperature whereas it remains stable in the degenerate regime. Presented analytical model is in good agreement with the numerical conductance calculation based on the implementation of the non-equilibrium Green's function method coupled to the density functional theory.

MATERIAIS
Número do produto
Marca
Descrição do produto

Sigma-Aldrich
Graphite, powder, <20 μm, synthetic
Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Graphite, rod, L 150 mm, diam. 3 mm, low density, 99.995% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Graphite, rod, L 150 mm, diam. 6 mm, 99.995% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Silicon, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
Silicon, rod, 100mm, diameter 12.7mm, single crystal - random orientation, 100%
Silicon, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
Silicon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
Silicon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
Silicon, rod, 50mm, diameter 2.0mm, crystalline, 100%
Silicon, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%
Silicon, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%
Silicon, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, rod, 100mm, diameter 5.0mm, crystalline, 100%
Silicon, rod, 100mm, diameter 2.0mm, crystalline, 100%
Silicon, rod, 50mm, diameter 6mm, single crystal, -111, 99.999%
Silicon, disks, 13mm, thickness 0.38mm, single crystal, 100%