The resistivity for this product is 10-3 - 40 Ω•cm as listed in the DESCRIPTION section under 'Physical Properties'.
647675
Silicon
wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sinônimo(s):
Silicon element
Faça loginpara ver os preços organizacionais e de contrato
Selecione um tamanho
1 SET
R$ 1.377,00
5 EA
R$ 4.704,00
Selecione um tamanho
Alterar visualização
1 SET
R$ 1.377,00
5 EA
R$ 4.704,00
About This Item
Fórmula linear:
Si
Número CAS:
Peso molecular:
28.09
Número MDL:
Código UNSPSC:
12352300
ID de substância PubChem:
NACRES:
NA.23
Produtos recomendados
Formulário
crystalline (cubic (a = 5.4037))
wafer (single side polished)
contém
boron as dopant
diâmetro × espessura
2 in. × 0.5 mm
p.e.
2355 °C (lit.)
pf
1410 °C (lit.)
densidade
2.33 g/mL at 25 °C (lit.)
propriedades semicondutoras
<100>, P-type
cadeia de caracteres SMILES
[Si]
InChI
1S/Si
chave InChI
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Procurando produtos similares? Visita Guia de comparação de produtos
Categorias relacionadas
Aplicação
Embalagem
1EA refers to 1 wafer and 5EA refers to 5 wafers
propriedades físicas
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
Código de classe de armazenamento
13 - Non Combustible Solids
Classe de risco de água (WGK)
nwg
Ponto de fulgor (°F)
Not applicable
Ponto de fulgor (°C)
Not applicable
Equipamento de proteção individual
Eyeshields, Gloves, type N95 (US)
Escolha uma das versões mais recentes:
Já possui este produto?
Encontre a documentação dos produtos que você adquiriu recentemente na biblioteca de documentos.
Os clientes também visualizaram
Epitaxial growth of 3C?SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition.
Zorman CA, et al.
Journal of Applied Physics, 78(8), 193-198 (2014)
Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition.
Narayan J, et al.
Applied Physics Letters, 61(11), 1290-1292 (1992)
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Artigos
Hybrid organic-inorganic sol-gel materials containing silica were first called “ORMOSILs” in 1984.
Protocolos
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
-
sheet resistance of 647675 of silicon
1 answer-
Helpful?
-
Active Filters
Nossa equipe de cientistas tem experiência em todas as áreas de pesquisa, incluindo Life Sciences, ciência de materiais, síntese química, cromatografia, química analítica e muitas outras.
Entre em contato com a assistência técnica
