GRFETS10

Graphene FET chip

S10

• Sinônimo(s): Graphene FET, Graphene FET sensor, Graphene FET with 30 Hall-bar devices and 6 2-probe configurations with varied channel geometry
• Código UNSPSC: 43211915
• NACRES: NA.23

Propriedades

• descrição: Dirac point:< 50 V ; Gate Oxide material: SiO₂; Gate Oxide thickness: 90 nm; Graphene field-effect mobility: >1000 cm²/V·s; Maximum gate-source voltage: ± 50 V; Maximum temperature rating: 150 °C; Maximum drain-source current density: 107 A/cm²; Metallization: Chromium 2 nm/Gold 50 nm; Monolayer CVD grown Graphene based field effect transistors (FET) S10; Residual charge carrier density: <2 x 10¹² cm^-2; Resistivity of substrate: 1-10 Ω·cm; Yield >75%

Descrição

Descrição geral

Device configuration:

This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.
The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.

Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm². The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.

Aplicação

• Graphene device research
• FET based sensor research for active materials deposited on graphene
• Chemical sensors
• Biosensors
• Bioelectronics
• Magnetic sensors
• Photodetectors

GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.

Características e benefícios

Device Features:

• State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene
• Devices are not encapsulated and can be functionalized by additives
• Perfect platform for sensor research and development
• 36 individual graphene FETs per chip
• Mobilities typically > 1000 cm2/V·s

Atenção

Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors.
To maintain the quality of the devices, we recommend taking the following precautions:

• Be careful when handling the graphene FET chip.
• Tweezers should not contact the device area directly.

Informações de segurança

• Código de classe de armazenamento: 11 - Combustible Solids
• Classe de risco de água (WGK): nwg
• Ponto de fulgor (°F): Not applicable
• Ponto de fulgor (°C): Not applicable