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773816

Sigma-Aldrich

2,9-Dihexylanthra[2,1,9-def:6,5,10-def′]diisoquinoline-1,3,8,10(2H,9H)tetrone

98%

Sinônimo(s):

N,N′-Dihexyl-3,4,9,10-perylenedicarboximide, PDI-C6

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About This Item

Fórmula empírica (Notação de Hill):
C36H34N2O4
Número CAS:
Peso molecular:
558.67
Número MDL:
Código UNSPSC:
12352103
ID de substância PubChem:
NACRES:
NA.23

Ensaio

98%

Formulário

powder

pf

>360 °C (lit)

λmax

524, 448, 229 nm in dichloromethane

propriedades semicondutoras

N-type (mobility=0.1-2.1 cm2/V·s)

cadeia de caracteres SMILES

CCCCCCN1C(=O)c2ccc3c4ccc5C(=O)N(CCCCCC)C(=O)c6ccc(c7ccc(C1=O)c2c37)c4c56

InChI

1S/C36H34N2O4/c1-3-5-7-9-19-37-33(39)25-15-11-21-23-13-17-27-32-28(36(42)38(35(27)41)20-10-8-6-4-2)18-14-24(30(23)32)22-12-16-26(34(37)40)31(25)29(21)22/h11-18H,3-10,19-20H2,1-2H3

chave InChI

DAMUEXRCHXVMQS-UHFFFAOYSA-N

Aplicação

  • High electron transporting character
  • Perylenebis(dicarboximide)s (PDIs) can be used as n-type materials for organic fieldeffect transistors (OFETs)
  • Good optical properties
  • Suitable for use in solution-processed organic phototransistors (OPTs)
  • Excellent candidate as an electron accepting building block for organic photovoltaics (OPVs)

Pictogramas

Exclamation mark

Palavra indicadora

Warning

Frases de perigo

Classificações de perigo

Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

Órgãos-alvo

Respiratory system

Código de classe de armazenamento

11 - Combustible Solids

Classe de risco de água (WGK)

WGK 3

Ponto de fulgor (°F)

Not applicable

Ponto de fulgor (°C)

Not applicable


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Inho Kim et al.
ACS applied materials & interfaces, 2(5), 1390-1394 (2010-04-22)
We report that device performance of organic solar cells consisting of zinc phthalocyanine and fullerene (C(60)) can be enhanced by insertion of a perylene derivative interfacial layer between fullerene and bathocuproine (BCP) exciton blocking layer (EBL). The morphology of the
Nikita Nekrasov et al.
Nanomaterials (Basel, Switzerland), 9(12) (2019-12-15)
In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic
Mirella El Gemayel et al.
Journal of the American Chemical Society, 134(4), 2429-2433 (2012-01-10)
We report on the fabrication of solution-processed organic phototransistors (OPTs) based on perylenebis(dicarboximide)s (PDIs). We found that the responsivity to the photoillumination depends on the transistor's channel length and that it can be tuned by varying the device geometry. The

Artigos

Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.

Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.

Solution-processed organic photovoltaic devices (OPVs) have emerged as a promising clean energy generating technology due to their ease of fabrication, potential to enable low-cost manufacturing via printing or coating techniques, and ability to be incorporated onto light weight, flexible substrates.

Thin, lightweight, and flexible electronic devices meet widespread demand for scalable, portable, and robust technology.

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