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Sigma-Aldrich

Dichlorosilane

≥99.99% trace metals basis

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About This Item

Fórmula linear:
Cl2SiH2
Número CAS:
Peso molecular:
101.01
Número CE:
Número MDL:
Código UNSPSC:
12352300
ID de substância PubChem:

densidade de vapor

3.5 (vs air)

pressão de vapor

1254 mmHg ( 20 °C)

descrição

film resistivity > 50 Ω-cm

Ensaio

≥99.99% trace metals basis

temperatura de autoignição

136 °F

Lim. expl.

99 %

pb

8.3 °C (lit.)

pf

−122 °C (lit.)

cadeia de caracteres SMILES

Cl[SiH2]Cl

InChI

1S/Cl2H2Si/c1-3-2/h3H2

chave InChI

MROCJMGDEKINLD-UHFFFAOYSA-N

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Descrição geral

Dichlorosilane (DCS) is a halogenated silicon based precursor that facilitates the growth of a variety of silane based films such as silicon oxide, silicon nitride, silicon carbide, and epitaxial growth of silica.

Aplicação

DCS is widely used in the synthesis of a variety of silicon-based materials, which find applications in the development of organic electronics based devices, including OFETs, MEMS, NEMS, MOSFETS, and lithium-ion batteries.

Palavra indicadora

Danger

Frases de perigo

Classificações de perigo

Acute Tox. 2 Inhalation - Eye Dam. 1 - Flam. Gas 1 - Press. Gas Liquefied gas - Skin Corr. 1B

Perigos de suplementos

Código de classe de armazenamento

2A - Gases

Classe de risco de água (WGK)

WGK 1

Ponto de fulgor (°F)

-34.6 °F

Ponto de fulgor (°C)

-37 °C

Equipamento de proteção individual

Faceshields, Gloves, Goggles, multi-purpose combination respirator cartridge (US)


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T Chen et al.
Electrophoresis, 20(12), 2412-2419 (1999-09-28)
The feasibility of polymeric phases based on a silicone polymer backbone as pseudostationary phases for electrokinetic chromatography has been investigated. Silicone phases were studied because of the range of chemistries that could be developed based on these backbones, and because
J Komatsu et al.
Journal of biomolecular structure & dynamics, 22(3), 331-337 (2004-10-12)
This report shows a new DNA stretching method using migration of an ice-water interface. DNA molecules were stretched accompanying the migration of the solid-liquid interface and immobilized in frozen area. This simple method needs no chemical modification to keep DNA
Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene.
Wang C and Tsai D
Materials Chemistry and Physics, 63(3), 196-201 (2000)
Stress control of polycrystalline 3C−SiC films in a large-scale LPCVD reactor using 1, 3-disilabutane and dichlorosilane as precursors.
Roper CS, et al.
Journal of Micromechanics and Microengineering, 16(12), 2736-2736 (2006)
Soujanya N Jampala et al.
Journal of agricultural and food chemistry, 53(9), 3618-3625 (2005-04-28)
The structure and rheological properties of xanthan gum (XG) modified in a cold plasma environment were investigated. XG was functionalized in a capacitively coupled 13.56-MHz radio frequency dichlorosilane (DS)-plasma conditions and, consecutively, in situ aminated by ethylenediamine. The surface structure

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