The resistivity for this product is 10-3 - 40 Ω•cm as listed in the DESCRIPTION section under 'Physical Properties'.
Fortfahren mit
647675
Silizium
wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Nachhaltigkeitsmerkmale
Synonym(e):
Silicon element
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| Größe/SKU | Verfügbarkeit | Preis |
|---|---|---|
1 set | Warenkorb auf Verfügbarkeit prüfen | € 160,00 |
5 ea | Warenkorb auf Verfügbarkeit prüfen | € 529,00 |
Über diesen Artikel
Lineare Formel:
Si
CAS-Nummer:
Molekulargewicht:
28.09
PubChem Substance ID:
UNSPSC Code:
12352300
MDL number:
NACRES:
NA.23
Technischer Dienst
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Unterstützung erhaltenQuality Segment
form
crystalline (cubic (a = 5.4037)), wafer (single side polished)
contains
boron as dopant
greener alternative product characteristics
Design for Energy Efficiency
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sustainability
Sustainability features
diam. × thickness
2 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
semiconductor properties
<100>, P-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
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0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
Application
<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.
Packaging
1EA refers to 1 wafer and 5EA refers to 5 wafers
1 of 1
Dieser Artikel | |||
|---|---|---|---|
| description wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm | description nanoparticles, 40 nm avg. part. size, ≥99% trace metals basis | description disks, 13mm, thickness 0.38mm, single crystal, 100% | description disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100% |
| form wafer (single side polished), crystalline (cubic (a = 5.4037)) | form nanoparticles, powder or crystals | form foil | form foil |
| Quality Level 100 | Quality Level 100 | Quality Level - | Quality Level - |
| bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) |
| mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) |
| density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) |
| greener alternative category | greener alternative category | greener alternative category - | greener alternative category - |
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sheet resistance of 647675 of silicon
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