The resistivity for this product is 10-3 - 40 Ω•cm as listed in the DESCRIPTION section under 'Physical Properties'.
Alle Fotos(1)
Wichtige Dokumente
647675
Silizium
wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Synonym(e):
Silicon element
Anmeldenzur Ansicht organisationsspezifischer und vertraglich vereinbarter Preise
Größe auswählen
1 SET
€ 153,00
5 EA
€ 506,00
Alle Fotos(1)
Größe auswählen
Ansicht ändern
1 SET
€ 153,00
5 EA
€ 506,00
About This Item
Lineare Formel:
Si
CAS-Nummer:
Molekulargewicht:
28.09
MDL-Nummer:
UNSPSC-Code:
12352300
PubChem Substanz-ID:
NACRES:
NA.23
Empfohlene Produkte
Form
crystalline (cubic (a = 5.4037))
wafer (single side polished)
Enthält
boron as dopant
Durchm. × Dicke
2 in. × 0.5 mm
bp
2355 °C (lit.)
mp (Schmelzpunkt)
1410 °C (lit.)
Dichte
2.33 g/mL at 25 °C (lit.)
Halbleitereigenschaften
<100>, P-type
SMILES String
[Si]
InChI
1S/Si
InChIKey
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Suchen Sie nach ähnlichen Produkten? Aufrufen Leitfaden zum Produktvergleich
Verwandte Kategorien
Anwendung
Verpackung
1EA refers to 1 wafer and 5EA refers to 5 wafers
Physikalische Eigenschaften
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
Lagerklassenschlüssel
13 - Non Combustible Solids
WGK
nwg
Flammpunkt (°F)
Not applicable
Flammpunkt (°C)
Not applicable
Persönliche Schutzausrüstung
Eyeshields, Gloves, type N95 (US)
Hier finden Sie alle aktuellen Versionen:
Besitzen Sie dieses Produkt bereits?
In der Dokumentenbibliothek finden Sie die Dokumentation zu den Produkten, die Sie kürzlich erworben haben.
Kunden haben sich ebenfalls angesehen
Epitaxial growth of 3C?SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition.
Zorman CA, et al.
Journal of Applied Physics, 78(8), 193-198 (2014)
Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition.
Narayan J, et al.
Applied Physics Letters, 61(11), 1290-1292 (1992)
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Artikel
Hybrid organic-inorganic sol-gel materials containing silica were first called “ORMOSILs” in 1984.
Protokolle
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
-
sheet resistance of 647675 of silicon
1 answer-
Helpful?
-
Active Filters
Unser Team von Wissenschaftlern verfügt über Erfahrung in allen Forschungsbereichen einschließlich Life Science, Materialwissenschaften, chemischer Synthese, Chromatographie, Analytik und vielen mehr..
Setzen Sie sich mit dem technischen Dienst in Verbindung.
