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481769

Gallium nitride

99.9% trace metals basis

Synonym(s):

Gallium mononitride, Gallium mononitride (GaN)

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10 g

Available to ship TODAYfromMILWAUKEE

$293.00
50 g

Estimated to ship onJune 12, 2026fromMILWAUKEE

$1,090.00

About This Item

Linear Formula:
GaN
CAS Number:
Molecular Weight:
83.73
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
247-129-0
MDL number:

$293.00


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assay

99.9% trace metals basis

form

powder

reaction suitability

core: gallium

mp

800 °C (lit.)

SMILES string

N#[Ga]

InChI

1S/Ga.N

InChI key

JMASRVWKEDWRBT-UHFFFAOYSA-N

Application

Gallium nitride (GaN) is a wide band gap semiconducting material, which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs), and field effect transistors (FETs). It can also be used as a transition metal dopant for spintronics-based applications.

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This Item
399116450863229644
assay

99.9% trace metals basis

assay

99.99% trace metals basis

assay

99.999% trace metals basis

assay

99.999% trace metals basis

form

powder

form

powder and chunks

form

powder

form

crystals and lumps

mp

800 °C (lit.)

mp

345 °C (subl.) (lit.)

mp

121.5 °C (lit.)

mp

110 °C (dec.) (lit.)

reaction suitability

core: gallium

reaction suitability

core: gallium, reagent type: catalyst

reaction suitability

core: gallium, reagent type: catalyst

reaction suitability

core: gallium, reagent type: catalyst

Quality Level

100

Quality Level

200

Quality Level

100

Quality Level

100


pictograms

Exclamation mark

signalword

Warning

hcodes

Hazard Classifications

Skin Sens. 1

Storage Class

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Faceshields, Gloves, type N95 (US)



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Articles

Lanthanide ions in spectral conversion enhance solar cell efficiency via photon conversion.

Conducting polymers such as polyaniline, polythiophene and polyfluorenes are now much in the spotlight for their applications in organic electronics and optoelectronics.


Fabrizio Gaulandris et al.
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 26(1), 3-17 (2020-01-21)
One of the biggest challenges for in situ heating transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) is the ability to measure the local temperature of the specimen accurately. Despite technological improvements in the construction of TEM/STEM heating
Gallium nitride nanowire nanodevices
Huang Y, et al.
Nano Letters, 2(2), 101-104 (2002)
Gallium nitride as an electromechanical material
Rais-Zadeh M, et al.
Journal of Microelectromechanical Systems : A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems, 23(6), 1252-1271 (2014)



Global Trade Item Number

SKUGTIN
481769-50G04061832388762
481769-10G04061832388755

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