Skip to Content
MilliporeSigma
All Photos(2)

Documents

481769

Sigma-Aldrich

Gallium nitride

99.9% trace metals basis

Synonym(s):

Gallium mononitride, Gallium mononitride (GaN)

Sign Into View Organizational & Contract Pricing
All Photos(2)

About This Item

Linear Formula:
GaN
CAS Number:
25617-97-4
Molecular Weight:
83.73
EC Number:
247-129-0
MDL number:
MFCD00016108
UNSPSC Code:
12352300
PubChem Substance ID:
24871779
NACRES:
NA.23

assay

99.9% trace metals basis

form

powder

mp

800 °C (lit.)

SMILES string

N#[Ga]

InChI

1S/Ga.N

InChI key

JMASRVWKEDWRBT-UHFFFAOYSA-N

Looking for similar products? Visit Product Comparison Guide

application

Gallium nitride (GaN) is a wide band gap semiconducting material, which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs), and field effect transistors (FETs). It can also be used as a transition metal dopant for spintronics-based applications.

pictograms

Exclamation mark
GHS07

signalword

Warning

hcodes

H317

Hazard Classifications

Skin Sens. 1

Storage Class

11 - Combustible Solids

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Faceshields, Gloves, type N95 (US)

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Customers Also Viewed

Slide 1 of 1

1 of 1

Aluminum nitride powder, 10 μm, ≥98%

Sigma-Aldrich

241903

Aluminum nitride

Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
Fabrizio Gaulandris et al.
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 26(1), 3-17 (2020-01-21)
One of the biggest challenges for in situ heating transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) is the ability to measure the local temperature of the specimen accurately. Despite technological improvements in the construction of TEM/STEM heating
Gallium nitride as an electromechanical material
Rais-Zadeh M, et al.
Journal of Microelectromechanical Systems : A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems, 23(6), 1252-1271 (2014)
Gallium nitride processing for electronics, sensors and spintronics, 2(2), 101-104 (2006)
Gallium nitride nanowire nanodevices
Huang Y, et al.
Nano Letters, 2(2), 101-104 (2002)
View All Related Papers

Articles

Conductive Polymers for Advanced Micro- and Nano-fabrication Processes

Conducting polymers such as polyaniline, polythiophene and polyfluorenes are now much in the spotlight for their applications in organic electronics and optoelectronics.

Lanthanide Ions for Solar Cells

Lanthanide ions in spectral conversion enhance solar cell efficiency via photon conversion.

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service