推薦產品
形狀
crystalline (cubic (a = 5.4037))
wafer (single side polished)
包含
boron as dopant
直徑× 厚度
3 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
密度
2.33 g/mL at 25 °C (lit.)
半導體屬性
<111>, P-type
SMILES 字串
[Si]
InChI
1S/Si
InChI 密鑰
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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物理性質
氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ωcm
儲存類別代碼
13 - Non Combustible Solids
水污染物質分類（WGK）
WGK 2
閃點（°F）
Not applicable
閃點（°C）
Not applicable
個人防護裝備
Eyeshields, Gloves, type N95 (US)
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文章
Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes
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光阻套件為光刻製程提供預先稱重的化學成分，並針對不同的基板選擇提供獨立的蝕刻劑。
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
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