Typically, a volatile Ti compound such as Titanium(IV) isopropoxide (TTIP), TiCl4, Titanium alkoxides, Ti(acac)4, etc., can be used as the precursor for depositing thin films of TiO2 using a PECVD system. It's important to note that different precursors have different boiling points and may result in different surface structures and morphologies.
推薦產品
化驗
97%
折射率
n20/D 1.389 (lit.)
bp
103-106 °C/2 mmHg (lit.)
密度
0.87 g/mL at 25 °C (lit.)
SMILES 字串
C[Si](C)(C)O[Si](O[Si](C)(C)C)(O[Si](C)(C)C)O[Si](C)(C)C
InChI
1S/C12H36O4Si5/c1-17(2,3)13-21(14-18(4,5)6,15-19(7,8)9)16-20(10,11)12/h1-12H3
InChI 密鑰
VNRWTCZXQWOWIG-UHFFFAOYSA-N
訊號詞
Warning
危險聲明
危險分類
Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
標靶器官
Respiratory system
儲存類別代碼
10 - Combustible liquids
水污染物質分類(WGK)
WGK 3
閃點(°F)
168.8 °F - closed cup
閃點(°C)
76 °C - closed cup
個人防護裝備
Eyeshields, Gloves, type ABEK (EN14387) respirator filter
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What precursors can be suggested for compatibility with our PECVD system in order to deposit thin films of TiO2?
1 answer-
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