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Merck

647772

Sigma-Aldrich

wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

别名:

Silicon element

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5 EA
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About This Item

线性分子式:
Si
CAS号:
分子量:
28.09
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23

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表单

crystalline (cubic (a = 5.4037))
wafer (single side polished)

质量水平

包含

boron as dopant

直径× 厚度

3 in. × 0.5 mm

沸点

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

半导体性质

<111>, P-type

SMILES字符串

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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物理属性

氧含量:≤ 1~1.8×1018/cm3;碳含量:≤ 5×1016/cm3;晶棒直径:1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ωcm

储存分类代码

13 - Non Combustible Solids

WGK

WGK 2

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)


历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on

商品

Hybrid organic-inorganic sol-gel materials containing silica were first called “ORMOSILs” in 1984.

实验方案

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

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