跳转至内容
Merck
所有图片(1)

主要文件

查看所有文档

647675

Sigma-Aldrich

硅

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

别名:

Silicon element

登录查看公司和协议定价

选择尺寸

1 SET
$229.00
5 EA
$784.00

$229.00

请联系客服了解存货情况
获取大包装报价
所有图片(1)

选择尺寸

变更视图
1 SET
$229.00
5 EA
$784.00

About This Item

线性分子式:
Si
CAS号:
7440-21-3
分子量:
28.09
MDL编号:
MFCD00085311
UNSPSC代码:
12352300
PubChem化学物质编号:
24883416
NACRES:
NA.23

$229.00

请联系客服了解存货情况
获取大包装报价

表单

crystalline (cubic (a = 5.4037))
wafer (single side polished)

包含

boron as dopant

直径× 厚度

2 in. × 0.5 mm

沸点

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

半导体性质

<100>, P-type

SMILES字符串

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

正在寻找类似产品? 访问 产品对比指南

相关类别

应用

<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC,[1] and TiN[2] thin films.

包装

1EA refers to 1 wafer and 5EA refers to 5 wafers

物理属性

氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ω-cm

储存分类代码

13 - Non Combustible Solids

WGK

nwg

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCV0098
MKCR9571
MKCN7297
MKCL8717
MKCJ1312

没有发现合适的版本？

如果您需要特殊版本，可通过批号或批次号查找具体证书。

搜索COA

已有该产品？

在文件库中查找您最近购买产品的文档。

访问文档库

Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition.
Narayan J, et al.
Applied Physics Letters, 61(11), 1290-1292 (1992)
Epitaxial growth of 3C?SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition.
Zorman CA, et al.
Journal of Applied Physics, 78(8), 193-198 (2014)
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
查看所有相关文献

商品

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Hybrid organic-inorganic sol-gel materials containing silica were first called “ORMOSILs” in 1984.

实验方案

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Questions

  1. sheet resistance of 647675 of silicon

    1 answer

    1. The resistivity for this product is 10-3 - 40 Ω•cm as listed in the DESCRIPTION section under 'Physical Properties'.

      Helpful?

Reviews

No rating value

Active Filters

我们的科学家团队拥有各种研究领域经验，包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.

联系技术服务部门