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Merck
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文件

647101

Sigma-Aldrich

硅

wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

别名:

硅元素

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About This Item

线性分子式:
Si
CAS号:
7440-21-3
分子量:
28.09
EC號碼:
231-130-8
MDL號碼:
MFCD00085311
分類程式碼代碼:
12352300
PubChem物質ID:
24883508
NACRES:
NA.23

形狀

crystalline (cubic (a = 5.4037))
wafer (single side polished)

不包含

dopant

直徑× 厚度

2 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

半導體屬性

<111>, N-type

SMILES 字串

[Si]

InChI

1S/Si

InChI 密鑰

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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相关类别

應用


  • Silicon Photonics and Electronics: Discusses the integration of silicon photonics with electronics, relevant for developing high-performance computational devices, pertinent to material science and high-performance computing research (C Xiang et al., 2021).

  • Silicon Silicon pi Single Bond: Details the structural chemistry of silicon and its implications in molecular and material sciences, useful for chemists interested in silicon′s applications in nanotechnology and materials science (S Kyushin et al., 2020).

物理性質

氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 100 - 3000Ωcm。

儲存類別代碼

13 - Non Combustible Solids

水污染物質分類（WGK）

nwg

閃點（°F）

Not applicable

閃點（°C）

Not applicable

個人防護裝備

Eyeshields, Gloves, type N95 (US)

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Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
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