647764
Silizium
wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Synonym(e):
Silicon element
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About This Item
Lineare Formel:
Si
CAS-Nummer:
Molekulargewicht:
28.09
EG-Nummer:
MDL-Nummer:
UNSPSC-Code:
12352300
PubChem Substanz-ID:
NACRES:
NA.23
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Form
crystalline (cubic (a = 5.4037))
wafer (single side polished)
Qualitätsniveau
Enthält
boron as dopant
Durchm. × Dicke
3 in. × 0.5 mm
bp
2355 °C (lit.)
mp (Schmelzpunkt)
1410 °C (lit.)
Dichte
2.33 g/mL at 25 °C (lit.)
Halbleitereigenschaften
<100>, P-type
SMILES String
[Si]
InChI
1S/Si
InChIKey
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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Physikalische Eigenschaften
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
Lagerklassenschlüssel
13 - Non Combustible Solids
WGK
WGK 3
Flammpunkt (°F)
Not applicable
Flammpunkt (°C)
Not applicable
Persönliche Schutzausrüstung
Eyeshields, Gloves, type N95 (US)
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Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
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