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Silizium
powder, −325 mesh, 99% trace metals basis
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About This Item
Lineare Formel:
Si
CAS-Nummer:
Molekulargewicht:
28.09
EG-Nummer:
MDL-Nummer:
UNSPSC-Code:
12141911
PubChem Substanz-ID:
NACRES:
NA.23
Empfohlene Produkte
Qualitätsniveau
Assay
99% trace metals basis
Form
powder
Partikelgröße
−325 mesh
bp
2355 °C (lit.)
mp (Schmelzpunkt)
1410 °C (lit.)
Dichte
2.33 g/mL at 25 °C (lit.)
SMILES String
[Si]
InChI
1S/Si
InChIKey
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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Allgemeine Beschreibung
Silicon powder is a fine, gray powder. This silicon powder has been passed through a 325-mesh screen, meaning that the particles are small enough to pass through a sieve with openings that are approximately 44 thousandths of an inch in diameter. Silicon is a chemical element and is a hard, brittle, metallic-gray solid that is highly resistant to chemical attack and has a high melting point. Silicon is the second most abundant element in the Earth’s crust and is found in a variety of minerals.
Anwendung
Silicon can be used as anode material in lithium-ion batteries.
It can be used to fabricate Al2O3-C refractories. The silicon powder generates β-Sialon whiskers which imparts high-temperature strength, slag resistance and thermal shock resistance of the refractories.
It can be incorporated into high-densitypolyethylene (HDPE) polymer composites. The addition of silicon powder enhancesthermal stability and thermal conductivity of composites.
It can be used to fabricate Al2O3-C refractories. The silicon powder generates β-Sialon whiskers which imparts high-temperature strength, slag resistance and thermal shock resistance of the refractories.
It can be incorporated into high-densitypolyethylene (HDPE) polymer composites. The addition of silicon powder enhancesthermal stability and thermal conductivity of composites.
Signalwort
Warning
H-Sätze
Gefahreneinstufungen
Flam. Sol. 2
Lagerklassenschlüssel
4.1B - Flammable solid hazardous materials
WGK
WGK 3
Flammpunkt (°F)
Not applicable
Flammpunkt (°C)
Not applicable
Persönliche Schutzausrüstung
Eyeshields, Gloves, type N95 (US)
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Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
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