647705
Silizium
wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Synonym(e):
Silicon element
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About This Item
Lineare Formel:
Si
CAS-Nummer:
Molekulargewicht:
28.09
MDL-Nummer:
UNSPSC-Code:
12352300
PubChem Substanz-ID:
NACRES:
NA.23
Empfohlene Produkte
Form
crystalline (cubic (a = 5.4037))
wafer
Qualitätsniveau
Enthält
boron as dopant
Durchm. × Dicke
2 in. × 0.3 mm
bp
2355 °C (lit.)
mp (Schmelzpunkt)
1410 °C (lit.)
Dichte
2.33 g/mL at 25 °C (lit.)
Halbleitereigenschaften
<111>, P-type
SMILES String
[Si]
InChI
1S/Si
InChIKey
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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Verwandte Kategorien
Physikalische Eigenschaften
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
Lagerklassenschlüssel
13 - Non Combustible Solids
WGK
WGK 2
Flammpunkt (°F)
Not applicable
Flammpunkt (°C)
Not applicable
Persönliche Schutzausrüstung
Eyeshields, Gloves, type N95 (US)
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Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Unser Team von Wissenschaftlern verfügt über Erfahrung in allen Forschungsbereichen einschließlich Life Science, Materialwissenschaften, chemischer Synthese, Chromatographie, Analytik und vielen mehr..
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