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  • 25th anniversary article: Understanding the lithiation of silicon and other alloying anodes for lithium-ion batteries.

25th anniversary article: Understanding the lithiation of silicon and other alloying anodes for lithium-ion batteries.

Advanced materials (Deerfield Beach, Fla.) (2013-09-17)
Matthew T McDowell, Seok Woo Lee, William D Nix, Yi Cui
要旨

Alloying anodes such as silicon are promising electrode materials for next-generation high energy density lithium-ion batteries because of their ability to reversibly incorporate a high concentration of Li atoms. However, alloying anodes usually exhibit a short cycle life due to the extreme volumetric and structural changes that occur during lithium insertion/extraction; these transformations cause mechanical fracture and exacerbate side reactions. To solve these problems, there has recently been significant attention devoted to creating silicon nanostructures that can accommodate the lithiation-induced strain and thus exhibit high Coulombic efficiency and long cycle life. In parallel, many experiments and simulations have been conducted in an effort to understand the details of volumetric expansion, fracture, mechanical stress evolution, and structural changes in silicon nanostructures. The fundamental materials knowledge gained from these studies has provided guidance for designing optimized Si electrode structures and has also shed light on the factors that control large-volume change solid-state reactions. In this paper, we review various fundamental studies that have been conducted to understand structural and volumetric changes, stress evolution, mechanical properties, and fracture behavior of nanostructured Si anodes for lithium-ion batteries and compare the reaction process of Si to other novel anode materials.

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製品番号
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製品内容

Sigma-Aldrich
リチウム, granular, 99% trace metals basis
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ケイ素, powder, −325 mesh, 99% trace metals basis
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ケイ素, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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リチウム, ribbon, thickness × W 0.38 mm × 23 mm, 99.9% trace metals basis
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ケイ素, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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ケイ素, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
リチウム, foil, 25x100mm, thickness 0.6mm, as rolled, 99.9%
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リチウム, granular, 4-10 mesh particle size, high sodium, 99% (metals basis)
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リチウム, ribbon, thickness × W 0.75 mm × 19 mm, 99.9% trace metals basis
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ケイ素, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
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リチウム, rod, diam. 12.7 mm, 99.9% trace metals basis
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リチウム, ribbon, thickness × W 1.5 mm × 100 mm, 99.9% trace metals basis
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リチウム, wire, diam. 3.2 mm, in mineral oil, ≥98%
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ケイ素, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
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リチウム, ribbon, thickness × W 0.75 mm × 45 mm, 99.9% trace metals basis
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リチウム, wire (in mineral oil), diam. 3.2 mm, 99.9% trace metals basis
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ケイ素, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
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ケイ素, pieces, 99.95% trace metals basis
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ケイ素, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
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ケイ素, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
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ケイ素, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
リチウム, foil, not light tested, 38x200mm, thickness 0.20mm, as rolled, 99.9%
Sigma-Aldrich
ケイ素, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
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ケイ素, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
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ケイ素, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
ケイ素, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
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リチウム, foil, not light tested, 38x500mm, thickness 0.20mm, as rolled, 99.9%
ケイ素, rod, 100mm, diameter 12.7mm, single crystal - random orientation, 100%
ケイ素, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
ケイ素, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%