Accéder au contenu
Merck
Toutes les photos(2)

Key Documents

View All Documentation

725544

Sigma-Aldrich

Tetrakis(ethylmethylamido)hafnium(IV)

packaged for use in deposition systems

Synonyme(s) :

TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)

Se connecterpour consulter vos tarifs contractuels et ceux de votre entreprise/organisme
Toutes les photos(2)

About This Item

Formule linéaire :
[(CH3)(C2H5)N]4Hf
Numéro CAS:
352535-01-4
Poids moléculaire :
410.90
Numéro MDL:
MFCD03427130
Code UNSPSC :
12352103
ID de substance PubChem :
329764168
Nomenclature NACRES :
NA.23

Niveau de qualité

100

Forme

liquid

Pertinence de la réaction

core: hafnium
reagent type: catalyst

Point d'ébullition

78 °C/0.01 mmHg (lit.)

Pf

<-50 °C

Densité

1.324 g/mL at 25 °C (lit.)

Température de stockage

2-8°C

Chaîne SMILES 

CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC

InChI

1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

Clé InChI

NPEOKFBCHNGLJD-UHFFFAOYSA-N

Vous recherchez des produits similaires ? Visite Guide de comparaison des produits

Description générale

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid, which freezes at -50 °C and boils around 78 °C at 0.1 Torr. It is air-and water-sensitive.

Application

Precursors Packaged for Depositions Systems
TEMAH is used as a precursor for atomic layer deposition(ALD) of conformal thin films of hafnium oxide (HfO2) and hafnium zirconium oxide (Hf1-xZrxO2), which are used as dielectric films in semiconductor fabrication because of their high dielectric constants.

TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS2. TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.

Caractéristiques et avantages

This TEMAH is packaged in a Swagelok stainless-steeldeposition system convenient for connecting to ALD systems.

  • Steel cylinder connected to 316 stainless steelball-valve
  • 1/4 inch male Swagelok VCR connections

Pictogrammes

FlameCorrosionExclamation mark
GHS02,GHS05,GHS07

Mention d'avertissement

Danger

Mentions de danger

H225,H260,H302,H314,H335

Classification des risques

Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1

Organes cibles

Respiratory system

Risques supp

EUH014

Code de la classe de stockage

4.3 - Hazardous materials which set free flammable gases upon contact with water

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

51.8 °F - closed cup

Point d'éclair (°C)

11 °C - closed cup

Faites votre choix parmi les versions les plus récentes :

Certificats d'analyse (COA)

Lot/Batch Number
SHBC4705V
SHBH4669V
SHBC3852V
20099EJV
16196JM

Vous ne trouvez pas la bonne version ?

Si vous avez besoin d'une version particulière, vous pouvez rechercher un certificat spécifique par le numéro de lot.

Rechercher un(e) COA

Déjà en possession de ce produit ?

Retrouvez la documentation relative aux produits que vous avez récemment achetés dans la Bibliothèque de documents.

Consulter la Bibliothèque de documents

Martin Rose et al.
ACS applied materials & interfaces, 2(2), 347-350 (2010-04-02)
The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor.
Luqi Tu et al.
Nature communications, 11(1), 101-101 (2020-01-05)
Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS2 photodetectors have focused
Jaehyun Yang et al.
ACS applied materials & interfaces, 5(11), 4739-4744 (2013-05-21)
We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water.
Kukli K, et al.
Chem. Vap. Deposition, 199-204 (2002)

Articles

Savannah ALD System for Atomic Layer Deposition

Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.

Savannah ALD System for Atomic Layer Deposition

Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.

Savannah ALD System for Atomic Layer Deposition

Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.

Savannah ALD System for Atomic Layer Deposition

Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.

Afficher tout

Notre équipe de scientifiques dispose d'une expérience dans tous les secteurs de la recherche, notamment en sciences de la vie, science des matériaux, synthèse chimique, chromatographie, analyse et dans de nombreux autres domaines..

Contacter notre Service technique