553123

Tetrakis(ethylmethylamido)hafnium(IV)

≥99.99% trace metals basis

• Synonyme(s) : TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)
• Formule linéaire : [(CH₃)(C₂H₅)N]₄Hf
• Numéro CAS: 352535-01-4
• Poids moléculaire : 410.90
• Numéro MDL: MFCD03427130
• Code UNSPSC : 12352103
• ID de substance PubChem : 24879306
• Nomenclature NACRES : NA.23

Propriétés

• Niveau de qualité: 200
• Pureté: ≥99.99% trace metals basis
• Forme: liquid
• Pertinence de la réaction: core: hafnium
• Impuretés: Purity excludes ~2000 ppm Zirconium
• Point d'ébullition: 78 °C/0.01 mmHg (lit.)
• Pf: <-50 °C
• Densité: 1.324 g/mL at 25 °C (lit.)
• Chaîne SMILES: CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC
• InChI: 1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
• Clé InChI: NPEOKFBCHNGLJD-UHFFFAOYSA-N

Description

Description générale

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid that is sensitive to water and air. It freezes at -50 °C and boilsaround 78 °C at 0.1 Torr.

Application

TEMAH is used as a precursor for atomic layer deposition (ALD)of hafnium oxide (HfO₂) thin films. Because HfO₂ has a high dielectric constant of 16-25, it is commonly used as a dielectric film in semiconductor fabrication.

TEMAH is ideal for ALD because of its low boiling point and its reactivity with water and ozone. Most importantly, its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), and Si(100). Researchers have also used it to deposit thin films ofHfO₂ on 2D materials, like MoS₂.


TEMAH is also useful precursor in the synthesis of ferroelectric hafnium zirconium oxide and Hf₁-xZrxO₂ thin films on MoS₂ phototransistors. Researchers have also deposited thin films of hafnium nitride (Hf₃N₄) by ALD alternatively pulsing TEMAH and ammonia.

Caractéristiques et avantages

• Thermally stable.
• It has sufficient volatility and is suitable for use in vapor deposition.
• Completely self-limiting surface reactions.

Informations sur la sécurité

• Pictogrammes: GHS02,GHS05,GHS07
• Mention d'avertissement: Danger
• Mentions de danger: H225,H260,H302,H314,H335
• Conseils de prudence: P210 - P231 + P232 - P280 - P301 + P312 - P303 + P361 + P353 - P305 + P351 + P338
• Classification des risques: Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1
• Organes cibles: Respiratory system
• Risques supp: EUH014
• Code de la classe de stockage: 4.3 - Hazardous materials which set free flammable gases upon contact with water
• Classe de danger pour l'eau (WGK): WGK 3
• Point d'éclair (°F): 51.8 °F - closed cup
• Point d'éclair (°C): 11 °C - closed cup
• Équipement de protection individuelle: Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter