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  • Chemical infiltration during atomic layer deposition: metalation of porphyrins as model substrates.

Chemical infiltration during atomic layer deposition: metalation of porphyrins as model substrates.

Angewandte Chemie (International ed. in English) (2009-06-06)
Lianbing Zhang, Avinash J Patil, Le Li, Angelika Schierhorn, Stephen Mann, Ulrich Gösele, Mato Knez
ZUSAMMENFASSUNG

New uses for ALD: By applying standard metal oxide atomic layer deposition (ALD) to two types of porphyrins, site-specific chemical infiltration of substrate molecules is achieved: Diethylzinc can diffuse into the interior of porphyrin supramolecular structures and induce metalation of the porphyrin molecules from the vapor phase. A = Ph, p-HO(3)SC(6)H(4).

MATERIALIEN
Produktnummer
Marke
Produktbeschreibung

Sigma-Aldrich
Diethylzink -Lösung, 1.0 M in hexanes
Sigma-Aldrich
Diethylzink, ≥52 wt. % Zn basis
Sigma-Aldrich
Diethylzink -Lösung, 15 wt. % in toluene
Sigma-Aldrich
Diethylzink -Lösung, 1.0 M in heptane