Direkt zum Inhalt
Merck

764639

Sigma-Aldrich

5,5′′′-Bis(tridecafluorohexyl)-2,2′:5′,2 ′′:5′′,2′′′-quaterthiophene

Synonym(e):

α,ω-Diperfluorohexyl-quarterthiophene, DFH-4T

Anmeldenzur Ansicht organisationsspezifischer und vertraglich vereinbarter Preise

Größe auswählen

250 MG
CHF 343.00

CHF 343.00


Voraussichtliches Versanddatum01. April 2025


Bulk-Bestellung anfordern

Größe auswählen

Ansicht ändern
250 MG
CHF 343.00

About This Item

Empirische Formel (Hill-System):
C28H8F26S4
CAS-Nummer:
Molekulargewicht:
966.58
MDL-Nummer:
UNSPSC-Code:
12352103
PubChem Substanz-ID:
NACRES:
NA.23

CHF 343.00


Voraussichtliches Versanddatum01. April 2025


Bulk-Bestellung anfordern

Form

solid

Qualitätsniveau

mp (Schmelzpunkt)

205-210 °C

Halbleitereigenschaften

N-type (mobility≤0.64 cm2/V·s)

SMILES String

FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)c1ccc(s1)-c2ccc(s2)-c3ccc(s3)-c4ccc(s4)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

InChI

1S/C28H8F26S4/c29-17(30,19(33,34)21(37,38)23(41,42)25(45,46)27(49,50)51)15-7-5-13(57-15)11-3-1-9(55-11)10-2-4-12(56-10)14-6-8-16(58-14)18(31,32)20(35,36)22(39,40)24(43,44)26(47,48)28(52,53)54/h1-8H

InChIKey

UBMTYFFPSPVBSP-UHFFFAOYSA-N

Allgemeine Beschreibung

5,5′′′-Bis(tridecafluorohexyl)-2,2′:5′,2′′:5′′,2′′′-quaterthiophene (DFH-4T) is a n-type semiconducting material. It is a quaterthiophene derivative that contains fluoroalkyl groups and can be used as an electron transporting layer. It can be used in organic electronics.[1][2]

Anwendung

This molecule has shown high mobilities (electron mobilities of up to 0.64 cm2/Vs) when used as an n-type semiconducting material in OFET devices.[3]

Lagerklassenschlüssel

11 - Combustible Solids

WGK

WGK 3

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable


Hier finden Sie alle aktuellen Versionen:

Analysenzertifikate (COA)

Lot/Batch Number

Die passende Version wird nicht angezeigt?

Wenn Sie eine bestimmte Version benötigen, können Sie anhand der Lot- oder Chargennummer nach einem spezifischen Zertifikat suchen.

Besitzen Sie dieses Produkt bereits?

In der Dokumentenbibliothek finden Sie die Dokumentation zu den Produkten, die Sie kürzlich erworben haben.

Die Dokumentenbibliothek aufrufen

Overlapping-Gate Organic Light-Emitting Transistors
Lee J, et al.
Advanced Electronic Materials, 5(1), 1800437-1800437 (2019)
A new method of using supercritical carbon dioxide as a green solvent for synthesis and purification of 5, 5?-bis (tridecafluorohexyl)-2, 2?: 5?, 2 ?: 5 ?, 2?-quaterthiophene, which is one of n-type organic semiconducting materials
Hirase R, et al.
Tetrahedron Letters, 59(5), 469-472 (2018)
Hakan Usta et al.
Accounts of chemical research, 44(7), 501-510 (2011-05-28)
Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features

Artikel

Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.

Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.

Solution-processed organic photovoltaic devices (OPVs) have emerged as a promising clean energy generating technology due to their ease of fabrication, potential to enable low-cost manufacturing via printing or coating techniques, and ability to be incorporated onto light weight, flexible substrates.

Thin, lightweight, and flexible electronic devices meet widespread demand for scalable, portable, and robust technology.

Questions

Reviews

No rating value

Active Filters

Unser Team von Wissenschaftlern verfügt über Erfahrung in allen Forschungsbereichen einschließlich Life Science, Materialwissenschaften, chemischer Synthese, Chromatographie, Analytik und vielen mehr..

Setzen Sie sich mit dem technischen Dienst in Verbindung.