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Sigma-Aldrich

Tetrakis(ethylmethylamido)hafnium(IV)

packaged for use in deposition systems

Synonyme(s) :

TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)

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About This Item

Formule linéaire :
[(CH3)(C2H5)N]4Hf
Numéro CAS:
352535-01-4
Poids moléculaire :
410.90
Numéro MDL:
MFCD03427130
Code UNSPSC :
12352103
ID de substance PubChem :
329764168
Nomenclature NACRES :
NA.23

Niveau de qualité

100

Forme

liquid

Pertinence de la réaction

core: hafnium
reagent type: catalyst

Point d'ébullition

78 °C/0.01 mmHg (lit.)

Pf

<-50 °C

Densité

1.324 g/mL at 25 °C (lit.)

Température de stockage

2-8°C

Chaîne SMILES 

CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC

InChI

1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

Clé InChI

NPEOKFBCHNGLJD-UHFFFAOYSA-N

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Description générale

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid, which freezes at -50 °C and boils around 78 °C at 0.1 Torr. It is air-and water-sensitive.

Application

Precursors Packaged for Depositions Systems
TEMAH is used as a precursor for atomic layer deposition(ALD) of conformal thin films of hafnium oxide (HfO2) and hafnium zirconium oxide (Hf1-xZrxO2), which are used as dielectric films in semiconductor fabrication because of their high dielectric constants.

TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS2. TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.

Caractéristiques et avantages

This TEMAH is packaged in a Swagelok stainless-steeldeposition system convenient for connecting to ALD systems.

  • Steel cylinder connected to 316 stainless steelball-valve
  • 1/4 inch male Swagelok VCR connections

Pictogrammes

FlameCorrosionExclamation mark
GHS02,GHS05,GHS07

Mention d'avertissement

Danger

Mentions de danger

H225,H260,H302,H314,H335

Classification des risques

Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1

Organes cibles

Respiratory system

Risques supp

EUH014

Code de la classe de stockage

4.3 - Hazardous materials which set free flammable gases upon contact with water

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

51.8 °F - closed cup

Point d'éclair (°C)

11 °C - closed cup

Certificats d'analyse (COA)

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Consulter la Bibliothèque de documents

Martin Rose et al.
ACS applied materials & interfaces, 2(2), 347-350 (2010-04-02)
The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor.
Luqi Tu et al.
Nature communications, 11(1), 101-101 (2020-01-05)
Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS2 photodetectors have focused
Jaehyun Yang et al.
ACS applied materials & interfaces, 5(11), 4739-4744 (2013-05-21)
We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water.
Kukli K, et al.
Chem. Vap. Deposition, 199-204 (2002)

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