553123

Tetrakis(ethylmethylamido)hafnium(IV)

≥99.99% trace metals basis

• Sinônimo(s): TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)
• Fórmula linear: [(CH₃)(C₂H₅)N]₄Hf
• Número CAS: 352535-01-4
• Peso molecular: 410.90
• Número MDL: MFCD03427130
• Código UNSPSC: 12352103
• ID de substância PubChem: 24879306
• NACRES: NA.23

Propriedades

• Ensaio: ≥99.99% trace metals basis
• forma: liquid
• adequação da reação: core: hafnium
• Impurezas: Purity excludes ~2000 ppm Zirconium
• pb: 78 °C/0.01 mmHg (lit.)
• pf: <-50 °C
• densidade: 1.324 g/mL at 25 °C (lit.)
• cadeia de caracteres SMILES: CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC
• InChI: 1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
• chave InChI: NPEOKFBCHNGLJD-UHFFFAOYSA-N

Descrição

Descrição geral

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid that is sensitive to water and air. It freezes at -50 °C and boilsaround 78 °C at 0.1 Torr.

Aplicação

TEMAH is used as a precursor for atomic layer deposition (ALD)of hafnium oxide (HfO₂) thin films. Because HfO₂ has a high dielectric constant of 16-25, it is commonly used as a dielectric film in semiconductor fabrication.

TEMAH is ideal for ALD because of its low boiling point and its reactivity with water and ozone. Most importantly, its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), and Si(100). Researchers have also used it to deposit thin films ofHfO₂ on 2D materials, like MoS₂.


TEMAH is also useful precursor in the synthesis of ferroelectric hafnium zirconium oxide and Hf₁-xZrxO₂ thin films on MoS₂ phototransistors. Researchers have also deposited thin films of hafnium nitride (Hf₃N₄) by ALD alternatively pulsing TEMAH and ammonia.

Características e benefícios

• Thermally stable.
• It has sufficient volatility and is suitable for use in vapor deposition.
• Completely self-limiting surface reactions.

Informações de segurança

• Pictogramas: GHS02,GHS05,GHS07
• Palavra indicadora: Danger
• Frases de perigo: H225,H260,H302,H314,H335
• Declarações de precaução: P210 - P231 + P232 - P280 - P301 + P312 - P303 + P361 + P353 - P305 + P351 + P338
• Classificações de perigo: Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1
• Órgãos-alvo: Respiratory system
• Perigos de suplementos: EUH014
• Código de classe de armazenamento: 4.3 - Hazardous materials which set free flammable gases upon contact with water
• Classe de risco de água (WGK): WGK 3
• Ponto de fulgor (°F): 51.8 °F - closed cup
• Ponto de fulgor (°C): 11 °C - closed cup
• Equipamento de proteção individual: Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter