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725544
Tetrakis(ethylmethylamid)hafnium(IV)
packaged for use in deposition systems
Synonym(e):
TEMAH, Tetrakis-(ethylmethylamino)-hafnium(IV)
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| Größe/SKU | Verfügbarkeit | Preis |
|---|---|---|
10 g | Warenkorb auf Verfügbarkeit prüfen | € 1.480,00 |
Über diesen Artikel
Lineare Formel:
[(CH3)(C2H5)N]4Hf
CAS-Nummer:
Molekulargewicht:
410.90
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
MDL number:
Technischer Dienst
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Unterstützung erhaltenQuality Segment
form
liquid
reaction suitability
core: hafnium, reagent type: catalyst
bp
78 °C/0.01 mmHg (lit.)
mp
<-50 °C
density
1.324 g/mL at 25 °C (lit.)
storage temp.
2-8°C
SMILES string
CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC
InChI
1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
InChI key
NPEOKFBCHNGLJD-UHFFFAOYSA-N
General description
Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid, which freezes at -50 °C and boils around 78 °C at 0.1 Torr. It is air-and water-sensitive.
Application
TEMAH is used as a precursor for atomic layer deposition(ALD) of conformal thin films of hafnium oxide (HfO2) and hafnium zirconium oxide (Hf1-xZrxO2), which are used as dielectric films in semiconductor fabrication because of their high dielectric constants.
TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS2. TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.
TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS2. TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.
Features and Benefits
This TEMAH is packaged in a SWAGELOK stainless-steeldeposition system convenient for connecting to ALD systems.
- Steel cylinder connected to 316 stainless steelball-valve
- 1/4 inch male SWAGELOK VCR connections
1 of 1
Dieser Artikel | |||
|---|---|---|---|
| description packaged for use in deposition systems | description ≥99.99% trace metals basis | description packaged for use in deposition systems | description 99.99% |
| form liquid | form - | form low-melting solid | form liquid |
| storage temp. 2-8°C | storage temp. - | storage temp. - | storage temp. - |
| mp <-50 °C | mp <-50 °C | mp 26-29 °C (lit.) | mp - |
| density 1.324 g/mL at 25 °C (lit.) | density 1.324 g/mL at 25 °C (lit.) | density 1.098 g/mL at 25 °C | density 1.249 g/mL at 25 °C (lit.) |
| bp 78 °C/0.01 mmHg (lit.) | bp 78 °C/0.01 mmHg (lit.) | bp - | bp 130 °C/0.01 mmHg (lit.) |
| reaction suitability core: hafnium, reagent type: catalyst | reaction suitability core: hafnium | reaction suitability core: hafnium | reaction suitability core: hafnium |
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Signalwort
Danger
Gefahrencodes
Zielorgane
Respiratory system
supp_hazards
Lagerklasse
4.3 - Hazardous materials which set free flammable gases upon contact with water
Was ist los?
WGK 3
Flammpunkt (°F)
51.8 °F - closed cup
Flammpunkt (°C)
11 °C - closed cup
Hazard Classifications
Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react. 1
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